All Transistors. 2SC3284 Datasheet

 

2SC3284 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SC3284
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 125 W
   Maximum Collector-Base Voltage |Vcb|: 150 V
   Maximum Collector-Emitter Voltage |Vce|: 150 V
   Maximum Collector Current |Ic max|: 14 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 60 MHz
   Forward Current Transfer Ratio (hFE), MIN: 90
   Noise Figure, dB: -
   Package: TO218

 2SC3284 Transistor Equivalent Substitute - Cross-Reference Search

   

2SC3284 Datasheet (PDF)

 ..1. Size:28K  sanken-ele
2sc3284.pdf

2SC3284

LAPT 2SC3284Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1303)Application : Audio and General Purpose(Ta=25C) Absolute maximum ratings (Ta=25C) Electrical Characteristics External Dimensions MT-100(TO3P)Symbol Ratings Symbol Conditions Ratings UnitUnit0.24.80.415.60.1VCBO 150 ICBO VCB=150V 100max A 9.6 2.0VVCEO 150 IEBO VEB=5V 100max

 ..2. Size:202K  inchange semiconductor
2sc3284.pdf

2SC3284
2SC3284

isc Silicon NPN Power Transistor 2SC3284DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = 150V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1303Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU

 8.1. Size:134K  mospec
2sc3281.pdf

2SC3284
2SC3284

AAA

 8.2. Size:25K  wingshing
2sc3280.pdf

2SC3284

2SC3280 NPN PLANAR SILICON TRANSISTORAUDIO POWER AMPLIFIERDC TO DC CONVERTER 2-21F1A High Current Capability High Power Dissipation Complementary to 2SA1301ABSOLUTE MAXIMUM RATING (Ta=25CC)CCCharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 160 V Collector-Emitter Voltage VCEO 160 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC 12 A Collec

 8.3. Size:190K  jmnic
2sc3281.pdf

2SC3284
2SC3284

JMnic Product Specification Silicon NPN Power Transistors 2SC3281 DESCRIPTION With TO-3PL package Complement to type 2SA1302 APPLICATIONS Power amplifier applications Recommended for 100W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PL) and symbol 3

 8.4. Size:202K  inchange semiconductor
2sc3280.pdf

2SC3284
2SC3284

isc Silicon NPN Power Transistor 2SC3280DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 160V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 2.0V(Max)@ I = 8ACE(sat) CComplement to Type 2SA1301Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 80W high fidelity au

 8.5. Size:198K  inchange semiconductor
2sc3285.pdf

2SC3284
2SC3284

isc Silicon NPN Power Transistor 2SC3285DESCRIPTIONCollector-Emitter Sustaining Voltage-V = 800V(Min)CEO(SUS)High Speed SwitchingGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector

 8.6. Size:202K  inchange semiconductor
2sc3281.pdf

2SC3284
2SC3284

isc Silicon NPN Power Transistor 2SC3281DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 200V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 3.0V(Max)@ I = 10A, I = 1ACE(sat) C BHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 100W high fid

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2N5194 | 2N410

 

 
Back to Top