2SC3305 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC3305
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 900 V
Maximum Collector-Emitter Voltage |Vce|: 800 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO3P
2SC3305 Transistor Equivalent Substitute - Cross-Reference Search
2SC3305 Datasheet (PDF)
2sc3309.pdf
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2sc3303.pdf
2SC3303 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3303 Industrial Applications High Current Switching Applications Unit: mmDC-DC Converter Applications Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) High speed switching time: tstg = 1.0 s (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCol
2sc3303.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 2SC3303 TRANSISTOR (NPN) TO-252-2L FEATURES 1. BASE Low Collector Saturation Voltage High Speed Switching Time2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltag
2sc3300.pdf
SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC3300DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOLow Collector Saturation Voltage-: V = 0.5V(Max)@ I = 5ACE(sat) CAPPLICATIONSDesigned for DC-DC converter, emergency lightinginverter and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE
2sc3306.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3306DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switchingapplications.High speed DC-DC converter applicat
2sc3309.pdf
isc Silicon NPN Power Transistor 2SC3309DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V (Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applications.High speed DC-DC converter applications.ABSOLUTE MAXIMUM RATINGS(T =25)a
2sc3307.pdf
isc Silicon NPN Power Transistor 2SC3307DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V(Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed and high voltage switching applications.Switching regulator applications.High speed DC-DC converter applications.ABSOLUTE M
2sc3303.pdf
isc Silicon NPN Power Transistor 2SC3303DESCRIPTIONHigh switching speed timeLow collector-to-emitter saturation voltageFast switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base
2sc3300.pdf
isc Silicon NPN Power Transistor 2SC3300DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOLow Collector Saturation Voltage-: V = 0.5V(Max)@ I = 5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for DC-DC converter, emergency lightinginverter and general purpose applicationsABSOLUTE
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
