2SC3306 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC3306
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 500 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 125 °C
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO218
2SC3306 Transistor Equivalent Substitute - Cross-Reference Search
2SC3306 Datasheet (PDF)
1.1. 2sc3306.pdf 
Size:227K _toshiba
1.2. 2sc3306.pdf Size:162K _mospec
A A A
1.3. 2sc3306.pdf Size:187K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-3P(I) package Ў¤ Collector-emitter sustaining voltageVCEO(sus)=400V(Min) Ў¤ Fast switching times APPLICATIONS Ў¤ Switching regulator and high voltage switching applications Ў¤ High speed DC-DC converter applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter
Datasheet: 2SC3300 , 2SC3301 , 2SC3302 , 2SC3303 , 2SC3303O , 2SC3303Y , 2SC3304 , 2SC3305 , TIP31C , 2SC3307 , 2SC3308 , 2SC3309 , 2SC331 , 2SC3310 , 2SC3311 , 2SC3312 , 2SC3313 .
