2SC331 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC331
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.02 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 1800 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO50-2
2SC331 Transistor Equivalent Substitute - Cross-Reference Search
2SC331 Datasheet (PDF)
2sc3311 2sc3311a.pdf
Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Request
2sc3313.pdf
Transistor2SC3313Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm4.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.Optimum for RF amplification of FM/AM radios.Absolute Maximum Ratings (Ta=25C)markingParameter Symbol Ratings Unit 1 2 3Collector to base voltage VCBO 30 VCollector to emitter voltage VCE
2sc3315 e.pdf
Transistor2SC3315Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm4.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.Optimum for RF amplification of FM/AM radios.High transition frequency fT.markingAbsolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol Ratings UnitCollector to base voltage VCBO 30 V
2sc3314.pdf
Transistor2SC3314Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SA13234.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.Optimum for RF amplification of FM/AM radios.High transition frequency fT.markingAbsolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol Ratings UnitCollector t
2sc3311.pdf
Transistor2SC3311ASilicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mmComplementary to 2SA1309A4.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.Absolute Maximum Ratings (Ta=25C)markingParameter Symbol Ratings Unit1 2 3Collector to base voltage VCBO 60 VCollector to emitter voltage VCEO 50 VEmitter to
2sc3312.pdf
Transistor2SC3312Silicon NPN epitaxial planer typeFor low-frequency and low-noise amplificationUnit: mmComplementary to 2SA13104.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.Low noise voltage NV.Absolute Maximum Ratings (Ta=25C)markingParameter Symbol Ratings Unit 1 2 3Collector to base voltage VCBO 60 VCollector to emit
2sc3313 e.pdf
Transistor2SC3313Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm4.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.Optimum for RF amplification of FM/AM radios.Absolute Maximum Ratings (Ta=25C)markingParameter Symbol Ratings Unit 1 2 3Collector to base voltage VCBO 30 VCollector to emitter voltage VCE
2sc3311a e.pdf
Transistor2SC3311ASilicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mmComplementary to 2SA1309A4.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.Absolute Maximum Ratings (Ta=25C)markingParameter Symbol Ratings Unit1 2 3Collector to base voltage VCBO 60 VCollector to emitter voltage VCEO 50 VEmitter to
2sc3315.pdf
Transistor2SC3315Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm4.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.Optimum for RF amplification of FM/AM radios.High transition frequency fT.markingAbsolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol Ratings UnitCollector to base voltage VCBO 30 V
2sc3312 e.pdf
Transistor2SC3312Silicon NPN epitaxial planer typeFor low-frequency and low-noise amplificationUnit: mmComplementary to 2SA13104.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.Low noise voltage NV.Absolute Maximum Ratings (Ta=25C)markingParameter Symbol Ratings Unit 1 2 3Collector to base voltage VCBO 60 VCollector to emit
2sc3314 e.pdf
Transistor2SC3314Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SA13234.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.Optimum for RF amplification of FM/AM radios.High transition frequency fT.markingAbsolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol Ratings UnitCollector t
2sc3318.pdf
FUJI POWER TRANSISTOR2SC3318TRIPLE DIFFUSED PLANER TYPEHIGH VOLTAGE,HIGH SPEED SWITCHINGOutline DrawingsTO-3PFeaturesHigh voltage,High speed switchingHigh reliabilityApplicationsSwitching regulatorsUltrasonic generatorsHigh frequency invertersJEDEC -General purpose power amplifiers EIAJ SC-65Maximum ratings and characteristicsAbsolute maximum ratings (Tc=25C
2sc3311a.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO 92S 2SC3311A TRANSISTOR (NPN) 1. EMITTER FEATURES 2. COLLECTOR Optimum for High-density Mounting 3. BASE Allowing Supply with the Radial Taping Complementary to 2SA1309A MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Vo
2sc3318.pdf
isc Silicon NPN Power Transistor 2SC3318DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXI
2sc3317.pdf
isc Silicon NPN Power Transistor 2SC3317DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25)
2sc3310.pdf
isc Silicon NPN Power Transistor 2SC3310DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V (Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applications.High speed DC-DC converter applications.ABSOLUTE MAXIMUM RATINGS(T =25)a
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
