All Transistors. 2SC3321 Datasheet

 

2SC3321 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SC3321

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 500 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO3

2SC3321 Transistor Equivalent Substitute - Cross-Reference Search

 

2SC3321 Datasheet (PDF)

4.1. 2sc3320b.pdf Size:230K _update

2SC3321
2SC3321

RoHS RoHS 2SC3320B SEMICONDUCTOR Nell High Power Products Silicon NPN triple diffusion planar transistor (High voltage switching transistor) 15A/400V/150W 15.6±0.4 4.8±0.2 9.6 2.0±0.1 Φ3.2±0,1 TO-3P(B) 2 3 +0.2 +0.2 0.65 1.05 -0.1 -0.1 FEATURES 5.45±0.1 5.45±0.1 1.4 High-speed switching B C E High collector to base voltage, VCBO Satisfactory linearity of fow

4.2. 2sc3329.pdf Size:320K _toshiba

2SC3321
2SC3321

2SC3329 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3329 For Low Noise Audio Amplifier Applications and Unit: mm Recommended for The First Stages of MC Head Amplifiers • Very low noise in the region of low signal source impedance equivalent input noise voltage: En = 0.6 nV/Hz1/2 (typ.) • Low pulse noise. Low 1/f noise • Low base spreading resistance

 4.3. 2sc3327.pdf Size:199K _toshiba

2SC3321
2SC3321



4.4. 2sc3328.pdf Size:214K _toshiba

2SC3321
2SC3321



 4.5. 2sc3325.pdf Size:196K _toshiba

2SC3321
2SC3321

2SC3325 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3325 Audio Frequency Low Power Amplifier Applications Unit: mm Driver Stage Amplifier Applications Switching Applications • Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA) • High voltage: V = 50 V (min) CEO • Complementary to 2SA1313 • Small package Maximum Ratings (Ta =

4.6. 2sc3326.pdf Size:280K _toshiba

2SC3321
2SC3321

2SC3326 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3326 For Muting and Switching Applications Unit: mm • High emitter-base voltage: VEBO = 25 V (min) • High reverse h : Reverse h = 150 (typ.) (V = -2 V, I = -4 mA) FE FE CE C • Low on resistance: R = 1 ? (typ.) (I = 5 mA) ON B • High DC current gain: hFE = 200~1200 • Small package Maximum Rati

4.7. 2sc3324.pdf Size:271K _toshiba

2SC3321
2SC3321

2SC3324 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3324 Audio Frequency Low Noise Amplifier Applications Unit: mm • High voltage: VCEO = 120 V • Excellent hFE linearity: hFE (IC = 0.1 mA)/ hFE (IC = 2 mA) = 0.95 (typ.) • High hFE: hFE = 200~700 • Low noise: NF (2) = 0.2dB (typ.), 3dB (max) • Complementary to 2SA1312 • Small package Absolu

4.8. 2sc3320.pdf Size:191K _utc

2SC3321
2SC3321

UNISONIC TECHNOLOGIES CO.,LTD 2SC3320 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE HIGH SPEED SWITCHING ? FEATURES * High voltage, high speed switching * High reliability ? ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC3320L-x-T3P-T 2SC3320L-x-T3P-T TO-3P B C E Tube 2SC3320L-x-T3N-T 2SC3320L-x-T3N-T TO-3PN B C E Tube No

4.9. 2sc3320.pdf Size:109K _fuji

2SC3321
2SC3321

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

4.10. 2sc3322.pdf Size:45K _hitachi

2SC3321
2SC3321

2SC3322 Silicon NPN Tirple Diffused Application High voltage, high speed and high power switching Outline TO-3P 1. Base 2. Collector (Flange) 3. Emitter 1 2 3 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 900 V Collector to emitter voltage VCEO 800 V Emitter to base voltage VEBO 7V Collector current IC 5A Collector peak current I

4.11. 2sc3320.pdf Size:182K _inchange_semiconductor

2SC3321
2SC3321

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3320 DESCRIPTION Ў¤ With TO-3PN package Ў¤ High voltage ,high speed switching Ў¤ High reliability APPLICATIONS Ў¤ Switching regulators Ў¤ Ultrasonic generators Ў¤ High frequency inverters Ў¤ General purpose power amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DES

4.12. 2sc3322.pdf Size:116K _inchange_semiconductor

2SC3321
2SC3321

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3322 DESCRIPTION Ў¤ With TO-3P(I) package Ў¤ High voltage Ў¤ High speed APPLICATIONS Ў¤ High power switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3P(I)) and symbol DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO

4.13. 2sc3325.pdf Size:1062K _kexin

2SC3321
2SC3321

SMD Type Transistors NPN Transistors 2SC3325 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● High voltage: VCEO = 50 V (min) ● Small package 1 2 ● Complementary to 2SA1313 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Co

4.14. 2sc3326.pdf Size:1066K _kexin

2SC3321
2SC3321

SMD Type Transistors NPN Transistors 2SC3326 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=300mA ● Collector Emitter Voltage VCEO=20V 1 2 +0.1 0.95-0.1 0.1+0.05 -0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collecto

4.15. 2sc3324.pdf Size:2812K _kexin

2SC3321
2SC3321

SMD Type Transistors NPN Transistors 2SC3324 SOT-23 Unit: mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 ■ Features ● Collector Current Capability IC=100mA 1 2 ● Collector Emitter Voltage VCEO=120V +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 ● Complementary to 2SA1312 1.9-0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 431 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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