2SC3324GR Specs and Replacement
Type Designator: 2SC3324GR
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: TO236
- BJT ⓘ Cross-Reference Search
2SC3324GR datasheet
..1. Size:309K toshiba
2sc3324gr 2sc3324bl.pdf 
2SC3324 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3324 Audio Frequency Low Noise Amplifier Applications Unit mm High voltage VCEO = 120 V Excellent hFE linearity hFE (IC = 0.1 mA)/ hFE (IC = 2 mA) = 0.95 (typ.) High hFE hFE = 200 to 700 Low noise NF (2) = 0.2dB (typ.), 3dB (max) Complementary to 2SA1312 Small package Abs... See More ⇒
7.1. Size:271K toshiba
2sc3324.pdf
2SC3324 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3324 Audio Frequency Low Noise Amplifier Applications Unit mm High voltage VCEO = 120 V Excellent hFE linearity hFE (IC = 0.1 mA)/ hFE (IC = 2 mA) = 0.95 (typ.) High hFE hFE = 200 700 Low noise NF (2) = 0.2dB (typ.), 3dB (max) Complementary to 2SA1312 Small package Absolu... See More ⇒
7.2. Size:2812K kexin
2sc3324.pdf
SMD Type Transistors NPN Transistors 2SC3324 SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features Collector Current Capability IC=100mA 1 2 Collector Emitter Voltage VCEO=120V +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 Complementary to 2SA1312 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector ... See More ⇒
8.2. Size:577K toshiba
2sc3326a 2sc3326b.pdf
2SC3326 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3326 For Muting and Switching Applications Unit mm AEC-Q101 Qualified (Note1). High emitter-base voltage V = 25 V EBO High reverse h Reverse h = 150 (typ.) (V = -2 V, I = -4 mA) FE FE CE C Low on resistance R = 1 (typ.) (I = 5 mA) ON B High DC current gain h = 200 to 1200 F... See More ⇒
8.3. Size:196K toshiba
2sc3325.pdf
2SC3325 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3325 Audio Frequency Low Power Amplifier Applications Unit mm Driver Stage Amplifier Applications Switching Applications Excellent hFE linearity hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA) High voltage V = 50 V (min) CEO Complementary to 2SA1313 Small package Maximum Ratings (Ta = ... See More ⇒
8.4. Size:320K toshiba
2sc3329.pdf
2SC3329 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3329 For Low Noise Audio Amplifier Applications and Unit mm Recommended for The First Stages of MC Head Amplifiers Very low noise in the region of low signal source impedance equivalent input noise voltage En = 0.6 nV/Hz1/2 (typ.) Low pulse noise. Low 1/f noise Low base spreading resistance... See More ⇒
8.6. Size:181K toshiba
2sc3325o 2sc3325y.pdf
2SC3325 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3325 Audio Frequency Low Power Amplifier Applications Unit mm Driver Stage Amplifier Applications Switching Applications Excellent hFE linearity hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA) High voltage VCEO = 50 V (min) Complementary to 2SA1313 Small package Absolute Maximum Ratings ... See More ⇒
8.7. Size:280K toshiba
2sc3326.pdf
2SC3326 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3326 For Muting and Switching Applications Unit mm High emitter-base voltage VEBO = 25 V (min) High reverse h Reverse h = 150 (typ.) (V = -2 V, I = -4 mA) FE FE CE C Low on resistance R = 1 (typ.) (I = 5 mA) ON B High DC current gain hFE = 200 1200 Small package Maximum Ra... See More ⇒
8.8. Size:191K utc
2sc3320.pdf
UNISONIC TECHNOLOGIES CO.,LTD 2SC3320 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE HIGH SPEED SWITCHING FEATURES * High voltage, high speed switching * High reliability ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC3320L-x-T3P-T 2SC3320L-x-T3P-T TO-3P B C E Tube 2SC3320L-x-T3N-T 2SC3320L-x-T3N-T TO-3PN B C E T... See More ⇒
8.9. Size:109K fuji
2sc3320.pdf
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com ... See More ⇒
8.10. Size:45K hitachi
2sc3322.pdf
2SC3322 Silicon NPN Tirple Diffused Application High voltage, high speed and high power switching Outline TO-3P 1. Base 2. Collector (Flange) 3. Emitter 1 2 3 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 900 V Collector to emitter voltage VCEO 800 V Emitter to base voltage VEBO 7V Collector current IC 5A Collector peak curre... See More ⇒
8.11. Size:230K nell
2sc3320b.pdf
RoHS RoHS 2SC3320B SEMICONDUCTOR Nell High Power Products Silicon NPN triple diffusion planar transistor (High voltage switching transistor) 15A/400V/150W 15.6 0.4 4.8 0.2 9.6 2.0 0.1 3.2 0,1 TO-3P(B) 2 3 +0.2 +0.2 0.65 1.05 -0.1 -0.1 FEATURES 5.45 0.1 5.45 0.1 1.4 High-speed switching B C E High collector to base voltage, VCBO Satisfactory linearity of fow... See More ⇒
8.12. Size:1062K kexin
2sc3325.pdf
SMD Type Transistors NPN Transistors 2SC3325 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features High voltage VCEO = 50 V (min) Small package 1 2 Complementary to 2SA1313 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Co... See More ⇒
8.13. Size:1066K kexin
2sc3326.pdf
SMD Type Transistors NPN Transistors 2SC3326 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=300mA Collector Emitter Voltage VCEO=20V 1 2 +0.1 0.95-0.1 0.1+0.05 -0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collecto... See More ⇒
8.14. Size:1299K cn sps
2sc3320t4tl.pdf
2SC3320T4TL Silicon NPN Power Transistor DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed High Reliability APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 500 V ... See More ⇒
8.15. Size:427K cn sptech
2sc3320.pdf
SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC3320 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed High Reliability APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT ... See More ⇒
8.16. Size:116K inchange semiconductor
2sc3322.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3322 DESCRIPTION With TO-3P(I) package High voltage High speed APPLICATIONS High power switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL P... See More ⇒
8.17. Size:199K inchange semiconductor
2sc3320.pdf
isc Silicon NPN Power Transistor 2SC3320 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers ABSOLUTE MAXI... See More ⇒
Detailed specifications: 2SC3319, 2SC332, 2SC3320, 2SC3321, 2SC3322, 2SC3323, 2SC3324, 2SC3324BL, D965, 2SC3325, 2SC3325O, 2SC3325Y, 2SC3326, 2SC3326A, 2SC3326B, 2SC3327, 2SC3327A
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