2N1983 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N1983
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.6 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 40 MHz
Collector Capacitance (Cc): 45 pF
Forward Current Transfer Ratio (hFE), MIN: 75
Noise Figure, dB: -
Package: TO5
Datasheet: 2N1973 , 2N1974 , 2N1975 , 2N1978 , 2N198 , 2N1980 , 2N1981 , 2N1982 , D209L , 2N1984 , 2N1985 , 2N1986 , 2N1987 , 2N1988 , 2N1989 , 2N199 , 2N1990 .