2SC3355 PDF and Equivalents Search

NEC's NPN SILICON HIGH NE856 FREQUENCY TRANSISTOR SERIES FEATURES HIGH GAIN BANDWIDTH PRODUCT fT = 7 GHz LOW NOISE FIGURE 1.1 dB at 1 GHz HIGH COLLECTOR CURRENT 100 mA HIGH RELIABILITY METALLIZATION 35 (MICRO-X) 00 (CHIP) LOW COST DESCRIPTION NEC's NE856 series of NPN epitaxial silicon transistors is designed for low cost amplifier and oscillator application... See More ⇒

DATA SHEET NPN SILICON RF TRANSISTOR 2SC3355 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION DESCRIPTION The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has lange dynamic range and good current characteristic. FEATURES Low noise and high gain NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @ VCE = ... See More ⇒

UNISONIC TECHNOLOGIES CO., LTD 2SC3355 NPN SILICON EPITAXIAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER FEATURES 1 * Low Noise and High Gain * High Power Gain TO-92 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC3355L-T92-B 2SC3355G-T92-B TO-92 B E C Tape Box 2SC3355L-T92-K 2SC3355G-T92-K TO-92 B E C Bulk ... See More ⇒

isc Silicon NPN RF Transistor 2SC3355 DESCRIPTION Low Noise NF = 1.5dB TYP @ VCE=10V IC=7mA f=1GHz High Power Gain S21e 2 = 9.5dB TYP @ VCE=10V IC=20mA f=1GHz Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV b... See More ⇒

DATA SHEET SILICON TRANSISTOR 2SC3357 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC3357 is an NPN silicon epitaxial transistor designed for (Unit mm) low noise amplifier at VHF, UHF and CATV band. It has large dynamic range and good current characteristic. 4.5 0.1 1.5 0.1 1.6 0.2 FEATURES Low Noise and High Gain NF = 1.1 dB TYP.,... See More ⇒

DATA SHEET DATA SHEET SILICON TRANSISTOR 2SC3356 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DIMENSIONS The 2SC3356 is an NPN silicon epitaxial transistor designed for low (Units mm) noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. 2.8 0.2 1.5 0.65+0.1 -0.15 FEATURES Low Noise and High G... See More ⇒

2SD1949 / 2SD1484K / 2SC1741S Transistors Transistors 2SC3359S (96-678-D15) (SPEC-D16) 318 ... See More ⇒

... See More ⇒

Transistor 2SC3354 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation/mixing Unit mm 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. High transition frequency fT. marking Absolute Maximum Ratings (Ta=25 C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage... See More ⇒

Transistor 2SC3354 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation/mixing Unit mm 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. High transition frequency fT. marking Absolute Maximum Ratings (Ta=25 C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage... See More ⇒

... See More ⇒

UNISONIC TECHNOLOGIES CO., LTD 2SC3356 NPN SILICON TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER 3 3 2 2 DESCRIPTION 1 1 The UTC 2SC3356 is designed for such applications as DC/DC SOT-23-3 SOT-23 converters, supply line switching, battery charger, LCD backlighting, (JEDEC TO-236) (EIAJ SC-59) peripheral drivers, Driver in low supply voltage applications (e.g. lamps an... See More ⇒

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SC3356 TRANSISTOR (NPN) SOT 23 FEATURES Low Noise and High Gain High Power Gain MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage 20 V CBO 3. COLLECTOR V Collector-Emitter Voltage 12 V CEO V Emitter-Bas... See More ⇒

2SC3356 TRANSISTOR (NPN) FEATURES SOT-23 / SOT-23-3L Power dissipation PCM 0.2 W (Tamb=25 ) Collector current 1. BASE ICM 0.1 A 2. EMITTER Collector-base voltage 3. COLLECTOR V(BR)CBO 20 V Operating and storage junction temperature range TJ, Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test... See More ⇒

Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM3356 MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEO 12 Vdc C... See More ⇒

2SC3356 SOT-23-3L Transistor(NPN) SOT-23-3L 1. BASE 2. EMITTER 2.92 3. COLLECTOR 0.35 1.17 Features 2.80 1.60 Low noise amplifier at VHF, UHF and CATV band. Low Noise and High Gain High Power Gain 0.15 1.90 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector- Base Voltage 20 V VC... See More ⇒

2SC3356 Silicon Epitaxial Planar Transistor A SOT-23 Dim Min Max FEATURES A 2.70 3.10 E Low noise and high gain. B 1.10 1.50 K B NF=1.1dB TYP.,Ga=11dB TYP. C 1.0 Typical @VCE=10V,IC=7mA, f=1.0GHz D 0.4 Typical E 0.35 0.48 J High power gain. MAG=13dB TYP. D G 1.80 2.00 @VCE=10V,IC=20mA,f=1.0GHz. G H 0.02 0.1 J 0.1 Typical H K 2.20 2.60 APPLICATIONS C All Dime... See More ⇒

2SC3356 High-Frequency Amplifier Transistor 3 NPN Silicon 1 P b Lead(Pb)-Free 2 FEATURES 1. BASE * Low noise amplifier at VHF, UHF and CATV band. 2. EMITTER 3. COLLECTOR * Low Noise and High Gain * High Power Gain SOT-23 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector- Base Voltage 20 V VCEO Collector-Emitter Voltage 12 V VEBO Emi... See More ⇒

2SC3356W(BR3DG3356W) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-323 NPN Silicon NPN transistor in a SOT-323 Plastic Package. / Features Low noise and high power gain. / Applications low noise amplifier at VHF, UHF and C... See More ⇒

DATA SHEET LESHAN RADIO COMPANY, LTD. L2SC3356LT1G DESCRIPTION The L2SC3356LT1 is an NPN silicon epitaxial transistor designed for S-L2SC3356LT1G low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capab... See More ⇒

DATA SHEET LESHAN RADIO COMPANY, LTD. L2SC3356LT1G DESCRIPTION The L2SC3356LT1 is an NPN silicon epitaxial transistor designed for S-L2SC3356LT1G low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capab... See More ⇒

DATA SHEET LESHAN RADIO COMPANY, LTD. DESCRIPTION L2SC3356WT1G The L2SC3356WT1is an NPN silicon epitaxial transistor designed for S-L2SC3356WT1G low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ... See More ⇒

DATA SHEET LESHAN RADIO COMPANY, LTD. DESCRIPTION L2SC3356WT1G The L2SC3356WT1is an NPN silicon epitaxial transistor designed for S-L2SC3356WT1G low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ... See More ⇒

SMD Type Transistors NPN Transistors 2SC3357 1.70 0.1 Features Low noise and high gain High power gain Large Ptot 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 12 V Emitter - Base Voltage VEBO 3 Collector Current - Conti... See More ⇒

SMD Type Transistors SMD Type NPN Transistors 2SC3356 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz 1 2 High power gain. +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz 1.Base 2.Emitter 3.collector Absolute Maximum Rating... See More ⇒

GST2SC3356 High-Frequency Amplifier Transistor NPN Silicon Product Description Features This device is designed as a general purpose Low noise amplifier at VHF, UHF and CATV amplifier and switch. band Low Noise and High Gain High Power Gain Lead(Pb)-Free Packages & Pin Assignments GST2SC3356F(SOT-23) Pin Description 1 Base 2 Emitter 3 Collector Marking Informati... See More ⇒

2SC3356 NPN 2SC3356 NPN SOT-23 VHF UHF CATV S21e 2 12dB @ VCE=10... See More ⇒

2SC3357 NPN 2SC3357 NPN SOT-89 VHF UHF CATV S21e 2 10 dB @ VCE=10V... See More ⇒

2SC3356 NPN Silicon Epitaxial Transistor Features Low noise and high gain. NF = 1.1 dB Typ., Ga =11dBTyp. @VCE =10V, IC =7mA, f =1.0GHz High power gain. MAG = 13 dB Typ. @VCE =10V, IC =20mA, f =1.0GHz hFE Classification Marking R25 Pb Rank S hFE 120 220 Lead-free SOT-23 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO 20 V Collector... See More ⇒

2SC3356-R25 Silicon Epitaxial Planar Transistor Silicon Epitaxial Planar Transistor 2SC3356-R25 FEATURES Low noise and high gain. NF=1.1dB TYP.,Ga=11dB TYP. @VCE=10V,IC=7mA, f=1.0GHz High power gain. MAG=13dB TYP. @VCE=10V,IC=20mA,f=1.0GHz. APPLICATIONS SOT-23 Designed for low noise amplifier at VHF,UHF and CATV band. ORDERING INFORMATION Type No. Marking Package C... See More ⇒

2SC3357 SMD Ty p e NPN Transistors 3 Features 2 Low noise and high gain 1 1.Base High power gain 2.Collector Large Ptot 3.Emitter Simplified outline(SOT-89) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 12 V Emitter - Base Voltage VEBO 3 Collector Current - Contin... See More ⇒

2SC3356 NPN Transistors 3 Features 2 Low noise and high gain. 1. Gate NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz 2. Source 1 3. Drain High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz Simplified outline(SOT23) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO 20 V Collector to emitter... See More ⇒

2SC3356S NPN N RF TRA N SILICON ANSISTOR 3 U equency low sistor Ultra high fre w noise trans Silicon epitax process. xial bipolar p H gain, low no High power g oise figure, hi c range and ideal current characteris igh dynamic n stics, 2 SOT-23 chip package, mai p inly used in VHF, UHF and CATV hi cy wideband amplifier. igh frequenc d low noise a 1 SOT-23 ... See More ⇒

... See More ⇒

NPN SILICON RF TRANSISTOR Feature High gain S21e 2 TYP. Value is 10dB @ VCE=10V IC=20mA f=1GHz Low noise NF TYP. Value is 1.7dB @ VCE=10V IC=7mA f=1GHz fT (TYP.) TYP. Value is 6.5GHz @ VCE=10V IC=20mA f=1GHz PIN DEFINITION 1 Collector 3 Base 2 Emitter SOT-89 Absolute Maximum Ratings TA=25 Unless Otherwise noted PARAMETER SYM... See More ⇒

2SC3356 TRANSISTOR (NPN) MARKING Equivalent Circuit SOT-23 1.BASE 2.EMITTER 3.COLLECTOR FEATURES High transition frequency Small rbb Cc and high gain. Small NF. ABSOLUTE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value Unit VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 11 V VEBO Emitter-Base Voltage 3 V IC Collec... See More ⇒

... See More ⇒

... See More ⇒

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD 2SC3356 MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEO 12 Vdc Collector-Base Voltage VCBO 20 Vdc Emitter-Base Voltage VEBO Vdc 3.0 Colle... See More ⇒

2SC3357 NPN Silicon RF Transistor FEATURES Low Noise and High Gain NF = 1.1 dB TYP., G = 8.0 dB TYP. a @V = 10 V, I = 7 mA, f = 1.0 GHz CE C NF = 1.8 dB TYP., G = 9.0 dB TYP. a @V = 10 V, I = 40 mA, f = 1.0 GHz CE C APPLICATIONS SOT-89 Designed for low noise amplifier at VHF, UHF and CATV band. MECHANICAL DATA Case SOT-89 Case Material Molded Plastic. UL flammabil... See More ⇒

2SC3356 BIPOLAR TRANSISTOR (NPN) FEATURES High power gain Low Noise For Low Noise Amplifier at UHF/VHF/CATV Band Surface Mount device SOT-23 MECHANICAL DATA Case SOT- 23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A Parameter Symbo... See More ⇒

2SC3356 (NPN) High-Frequency Amplifier Transistor 1 TO-92 3 FEATURES 2 * SOT23 1 Low noise and high gain. NF=1.1dB Typ. f=1.0 GHz Ga=11dB Typ.@Vce=10V,Ic=7mA 3 * High power gain. 2 1 MAG=13dB Typ.@Vce=10V,Ic=20mA f=1.0 GHz SOT-23-3L 3 2 1 SOT-523 1 B 2 E 3 C ... See More ⇒

INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3357 DESCRIPTION Low Noise and High Gain NF = 1.1 dB TYP., G = 8.0 dB TYP. a @V = 10 V, I = 7 mA, f = 1.0 GHz CE C NF = 1.8 dB TYP., G = 9.0 dB TYP. a @V = 10 V, I = 40 mA, f = 1.0 GHz CE C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed ... See More ⇒

isc Silicon NPN Power Transistor 2SC3352 DESCRIPTION Collector-Emiiter Sustaining Voltage- V = 500V(Min.) CEO(SUS) Low Collector Saturation Voltage V = 1.0V(Max.)@ I = 1A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATI... See More ⇒

isc Silicon NPN Power Transistor 2SC3353A DESCRIPTION Collector-Emiiter Sustaining Voltage- V = 500V(Min.) CEO(SUS) Low Collector Saturation Voltage V = 1.0V(Max.)@ I = 3A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RAT... See More ⇒

isc Silicon NPN Power Transistor 2SC3353 DESCRIPTION Collector-Emiiter Sustaining Voltage- V = 500V(Min.) CEO(SUS) Low Collector Saturation Voltage V = 1.0V(Max.)@ I = 3A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATI... See More ⇒

INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3356 DESCRIPTION Low Noise and High Gain NF = 1.1 dB TYP., G = 11 dB TYP. a @V = 10 V, I = 7 mA, f = 1.0 GHz CE C High Power Gain MAG = 13 dB TYP. @V = 10 V, I = 20 mA, f = 1.0 GHz CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low noise amplifier at ... See More ⇒