All Transistors. 2SC3355 Datasheet

 

2SC3355 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SC3355
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.6 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 6500 MHz
   Forward Current Transfer Ratio (hFE), MIN: 35
   Noise Figure, dB: -
   Package: TO92

 2SC3355 Transistor Equivalent Substitute - Cross-Reference Search

   

2SC3355 Datasheet (PDF)

 ..1. Size:257K  nec
ne856 2sc5011 2sc5006 2sc4226 2sc3355 2sc3603 2sc3356 2sc3357 2sc3603 2sc4093.pdf

2SC3355 2SC3355

NEC's NPN SILICON HIGH NE856FREQUENCY TRANSISTOR SERIESFEATURES HIGH GAIN BANDWIDTH PRODUCT:fT = 7 GHz LOW NOISE FIGURE:1.1 dB at 1 GHz HIGH COLLECTOR CURRENT: 100 mA HIGH RELIABILITY METALLIZATION35 (MICRO-X)00 (CHIP) LOW COSTDESCRIPTIONNEC's NE856 series of NPN epitaxial silicon transistors isdesigned for low cost amplifier and oscillator application

 ..2. Size:84K  nec
2sc3355.pdf

2SC3355 2SC3355

DATA SHEETNPN SILICON RF TRANSISTOR2SC3355NPN EPITAXIAL SILICON RF TRANSISTORFOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATIONDESCRIPTIONThe 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.It has lange dynamic range and good current characteristic.FEATURES Low noise and high gainNF = 1.1 dB TYP., Ga = 8.0 dB TYP. @ VCE =

 ..3. Size:71K  utc
2sc3355.pdf

2SC3355 2SC3355

UNISONIC TECHNOLOGIES CO., LTD 2SC3355 NPN SILICON EPITAXIAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER FEATURES 1* Low Noise and High Gain * High Power Gain TO-92 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC3355L-T92-B 2SC3355G-T92-B TO-92 B E C Tape Box2SC3355L-T92-K 2SC3355G-T92-K TO-92 B E C Bulk

 ..4. Size:192K  inchange semiconductor
2sc3355.pdf

2SC3355 2SC3355

isc Silicon NPN RF Transistor 2SC3355DESCRIPTION Low NoiseNF = 1.5dB TYP @ VCE=10VIC=7mA f=1GHzHigh Power GainS21e2 = 9.5dB TYP @ VCE=10VIC=20mAf=1GHzMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThe 2SC3355 is an NPN silicon epitaxial transistordesigned for low noise amplifier at VHF, UHF and CATV b

 8.1. Size:77K  nec
2sc3357.pdf

2SC3355 2SC3355

DATA SHEETSILICON TRANSISTOR2SC3357NPN SILICON EPITAXIAL TRANSISTORPOWER MINI MOLDDESCRIPTIONPACKAGE DIMENSIONSThe 2SC3357 is an NPN silicon epitaxial transistor designed for(Unit: mm)low noise amplifier at VHF, UHF and CATV band.It has large dynamic range and good current characteristic.4.50.11.50.11.60.2FEATURES Low Noise and High GainNF = 1.1 dB TYP.,

 8.2. Size:91K  nec
2sc3356.pdf

2SC3355 2SC3355

DATA SHEETDATA SHEETSILICON TRANSISTOR2SC3356MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTORDESCRIPTIONPACKAGE DIMENSIONSThe 2SC3356 is an NPN silicon epitaxial transistor designed for low(Units: mm)noise amplifier at VHF, UHF and CATV band.It has dynamic range and good current characteristic. 2.80.21.50.65+0.1-0.15FEATURES Low Noise and High G

 8.3. Size:35K  rohm
2sc1741as 2sc3359s 2sd1484.pdf

2SC3355

2SD1949 / 2SD1484K / 2SC1741STransistorsTransistors2SC3359S(96-678-D15)(SPEC-D16)318

 8.4. Size:207K  panasonic
2sc3353 2sc3353a.pdf

2SC3355 2SC3355

 8.5. Size:45K  panasonic
2sc3354.pdf

2SC3355 2SC3355

Transistor2SC3354Silicon NPN epitaxial planer typeFor high-frequency amplification/oscillation/mixingUnit: mm4.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.High transition frequency fT.markingAbsolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage

 8.6. Size:49K  panasonic
2sc3354 e.pdf

2SC3355 2SC3355

Transistor2SC3354Silicon NPN epitaxial planer typeFor high-frequency amplification/oscillation/mixingUnit: mm4.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.High transition frequency fT.markingAbsolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage

 8.7. Size:31K  utc
2sc3358.pdf

2SC3355 2SC3355

 8.8. Size:219K  utc
2sc3356.pdf

2SC3355 2SC3355

UNISONIC TECHNOLOGIES CO., LTD 2SC3356 NPN SILICON TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER 332 2 DESCRIPTION 1 1The UTC 2SC3356 is designed for such applications as: DC/DC SOT-23-3 SOT-23 converters, supply line switching, battery charger, LCD backlighting, (JEDEC TO-236) (EIAJ SC-59)peripheral drivers, Driver in low supply voltage applications (e.g.lamps an

 8.9. Size:842K  jiangsu
2sc3356.pdf

2SC3355 2SC3355

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors2SC3356 TRANSISTOR (NPN)SOT23 FEATURES Low Noise and High Gain High Power GainMAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASESymbol Parameter Value Unit 2. EMITTERV Collector-Base Voltage 20 V CBO3. COLLECTORV Collector-Emitter Voltage 12 V CEOV Emitter-Bas

 8.10. Size:643K  htsemi
2sc3356.pdf

2SC3355 2SC3355

2SC3356 TRANSISTOR (NPN) FEATURES SOT-23 / SOT-23-3L Power dissipation PCM: 0.2 W (Tamb=25) Collector current 1. BASE ICM: 0.1 A 2. EMITTER Collector-base voltage 3. COLLECTOR V(BR)CBO: 20 V Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test

 8.11. Size:277K  gsme
2sc3356.pdf

2SC3355 2SC3355

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM3356MAXIMUM RATINGSMAXIMUM RATINGS MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector-Emitter VoltageVCEO 12 VdcC

 8.12. Size:218K  lge
2sc3356 2sc3356 sot-23-3l.pdf

2SC3355 2SC3355

2SC3356 SOT-23-3L Transistor(NPN)SOT-23-3L1. BASE 2. EMITTER 2.923. COLLECTOR 0.351.17Features2.80 1.60 Low noise amplifier at VHF, UHF and CATV band. Low Noise and High Gain High Power Gain 0.151.90Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector- Base Voltage 20 V VC

 8.13. Size:1092K  lge
2sc3356.pdf

2SC3355 2SC3355

2SC3356 Silicon Epitaxial Planar TransistorA SOT-23 Dim Min MaxFEATURES A 2.70 3.10E Low noise and high gain. B 1.10 1.50K BNF=1.1dB TYP.,Ga=11dB TYP. C 1.0 Typical@VCE=10V,IC=7mA, f=1.0GHz D 0.4 TypicalE 0.35 0.48J High power gain. MAG=13dB TYP. DG 1.80 2.00@VCE=10V,IC=20mA,f=1.0GHz. GH 0.02 0.1J 0.1 TypicalHK 2.20 2.60APPLICATIONSCAll Dime

 8.14. Size:402K  wietron
2sc3356.pdf

2SC3355 2SC3355

2SC3356High-Frequency Amplifier Transistor3NPN Silicon 1P b Lead(Pb)-Free2FEATURES1. BASE* Low noise amplifier at VHF, UHF and CATV band. 2. EMITTER3. COLLECTOR* Low Noise and High Gain* High Power GainSOT-23MAXIMUM RATINGS (TA=25 unless otherwise noted)Symbol Parameter Value UnitsVCBO Collector- Base Voltage 20 VVCEO Collector-Emitter Voltage 12 VVEBO Emi

 8.15. Size:656K  blue-rocket-elect
2sc3356w.pdf

2SC3355 2SC3355

2SC3356W(BR3DG3356W) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-323 NPN Silicon NPN transistor in a SOT-323 Plastic Package. / Features Low noise and high power gain. / Applications low noise amplifier at VHF, UHF and C

 8.16. Size:140K  lrc
l2sc3356lt1g.pdf

2SC3355 2SC3355

DATA SHEETLESHAN RADIO COMPANY, LTD.L2SC3356LT1GDESCRIPTIONThe L2SC3356LT1 is an NPN silicon epitaxial transistor designed for S-L2SC3356LT1Glow noise amplifier at VHF, UHF and CATV band.It has dynamic range and good current characteristic.3S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capab

 8.17. Size:140K  lrc
l2sc3356lt1g l2sc3356lt3g.pdf

2SC3355 2SC3355

DATA SHEETLESHAN RADIO COMPANY, LTD.L2SC3356LT1GDESCRIPTIONThe L2SC3356LT1 is an NPN silicon epitaxial transistor designed for S-L2SC3356LT1Glow noise amplifier at VHF, UHF and CATV band.It has dynamic range and good current characteristic.3S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capab

 8.18. Size:167K  lrc
l2sc3356wt1g.pdf

2SC3355 2SC3355

DATA SHEETLESHAN RADIO COMPANY, LTD.DESCRIPTION L2SC3356WT1GThe L2SC3356WT1is an NPN silicon epitaxial transistor designed for S-L2SC3356WT1Glow noise amplifier at VHF, UHF and CATV band.It has dynamic range and good current characteristic. 3S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

 8.19. Size:167K  lrc
l2sc3356wt1g l2sc3356wt3g.pdf

2SC3355 2SC3355

DATA SHEETLESHAN RADIO COMPANY, LTD.DESCRIPTION L2SC3356WT1GThe L2SC3356WT1is an NPN silicon epitaxial transistor designed for S-L2SC3356WT1Glow noise amplifier at VHF, UHF and CATV band.It has dynamic range and good current characteristic. 3S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

 8.20. Size:1019K  kexin
2sc3357.pdf

2SC3355 2SC3355

SMD Type TransistorsNPN Transistors2SC33571.70 0.1 Features Low noise and high gain High power gain Large Ptot0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 12 V Emitter - Base Voltage VEBO 3 Collector Current - Conti

 8.21. Size:1257K  kexin
2sc3356.pdf

2SC3355 2SC3355

SMD Type TransistorsSMD TypeNPN Transistors2SC3356SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13FeaturesLow noise and high gain.NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz1 2High power gain. +0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.1MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz1.Base2.Emitter3.collectorAbsolute Maximum Rating

 8.22. Size:473K  globaltech semi
gst2sc3356.pdf

2SC3355 2SC3355

GST2SC3356 High-Frequency Amplifier Transistor NPN Silicon Product Description Features This device is designed as a general purpose Low noise amplifier at VHF, UHF and CATV amplifier and switch. band Low Noise and High Gain High Power Gain Lead(Pb)-FreePackages & Pin Assignments GST2SC3356F(SOT-23) Pin Description1 Base 2 Emitter 3 Collector Marking Informati

 8.23. Size:2026K  slkor
2sc3356b 2sc3356c 2sc3356d.pdf

2SC3355 2SC3355

2SC3356NPN2SC3356 NPN SOT-23 VHFUHF CATV :S21e2 12dB @ VCE=10

 8.24. Size:2447K  slkor
2sc3357a 2sc3357b 2sc3357c 2sc3357d.pdf

2SC3355 2SC3355

2SC3357NPN2SC3357 NPN SOT-89 VHFUHF CATV :S21e2 10 dB @ VCE=10V

 8.25. Size:1126K  anbon
2sc3356.pdf

2SC3355 2SC3355

2SC3356NPN Silicon Epitaxial TransistorFeaturesLow noise and high gain.NF = 1.1 dB Typ., Ga =11dBTyp. @VCE =10V, IC =7mA, f =1.0GHzHigh power gain.MAG = 13 dB Typ. @VCE =10V, IC =20mA, f =1.0GHzhFE ClassificationMarking R25PbRank ShFE 120 220Lead-free SOT-23 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector to base voltage VCBO 20 VCollector

 8.26. Size:661K  jsmsemi
2sc3356-r25.pdf

2SC3355 2SC3355

2SC3356-R25Silicon Epitaxial Planar Transistor Silicon Epitaxial Planar Transistor 2SC3356-R25 FEATURES Low noise and high gain. NF=1.1dB TYP.,Ga=11dB TYP. @VCE=10V,IC=7mA, f=1.0GHz High power gain. MAG=13dB TYP. @VCE=10V,IC=20mA,f=1.0GHz. APPLICATIONS SOT-23 Designed for low noise amplifier at VHF,UHF and CATV band. ORDERING INFORMATION Type No. Marking Package C

 8.27. Size:1949K  cn shikues
2sc3356s-b 2sc3356s-c 2sc3356s-d.pdf

2SC3355 2SC3355

2SC3356SNPN N RF TRAN SILICON ANSISTOR 3 U equency low sistor Ultra high fre w noise transSilicon epitax process. xial bipolar pH gain, low noHigh power g oise figure, hi c range and ideal current characterisigh dynamic n stics, 2 SOT-23 chip package, maip inly used in VHF, UHF and CATV hi cy wideband amplifier.igh frequenc d low noise a1 SOT-23

 8.28. Size:608K  cn shikues
2sc3356k-b 2sc3356k-c 2sc3356k-d.pdf

2SC3355 2SC3355

NPN N RF TRAN SILICON ANSISTOR 3 U equency low sistor Ultra high fre w noise transSilicon epitax process. xial bipolar pH gain, low noHigh power g oise figure, hi c range and ideal current characterisigh dynamic n stics, SC-59 chip p inly used in VHF, UHF and CATV 2 package, maii cy wideband amplifier.high frequenc d low noise a 1 SCC-59 Fea 1

 8.29. Size:364K  cn shikues
2sc3357a 2sc3357b 2sc3357c 2sc3357d 2sc3357e.pdf

2SC3355 2SC3355

NPN SILICON RF TRANSISTOR Feature High gain:S21e2 TYP. Value is 10dB @ VCE=10VIC=20mAf=1GHz Low noise: NF TYP. Value is 1.7dB @ VCE=10VIC=7mAf=1GHz fT (TYP.) : TYP. Value is 6.5GHz @ VCE=10VIC=20mAf=1GHz PIN DEFINITION: 1 Collector 3Base 2 Emitter SOT-89 Absolute Maximum Ratings TA=25 Unless Otherwise noted PARAMETER SYM

 8.30. Size:1175K  cn yongyutai
2sc3356.pdf

2SC3355 2SC3355

2SC3356 TRANSISTOR (NPN)MARKING: Equivalent Circuit:SOT-231.BASE2.EMITTER3.COLLECTORFEATURES: High transition frequency Small rbbCc and high gain. Small NF.ABSOLUTE MAXIMUM RATINGS (Ta=25 unless otherwise noted)Parameter Symbol Value UnitVCBOCollector-Base Voltage 20 VVCEOCollector-Emitter Voltage 11 VVEBOEmitter-Base Voltage 3 VICCollec

 8.31. Size:1157K  cn tech public
2sc3357.pdf

2SC3355 2SC3355

 8.32. Size:1499K  cn tech public
2sc3356.pdf

2SC3355 2SC3355

 8.33. Size:217K  cn fosan
2sc3356.pdf

2SC3355 2SC3355

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD2SC3356MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter VoltageVCEO 12 VdcCollector-Base VoltageVCBO 20 VdcEmitter-Base VoltageVEBO Vdc3.0Colle

 8.34. Size:1029K  cn hottech
2sc3357.pdf

2SC3355 2SC3355

2SC3357NPN Silicon RF TransistorFEATURESLow Noise and High GainNF = 1.1 dB TYP., G = 8.0 dB TYP.a@V = 10 V, I = 7 mA, f = 1.0 GHzCE CNF = 1.8 dB TYP., G = 9.0 dB TYP.a@V = 10 V, I = 40 mA, f = 1.0 GHzCE CAPPLICATIONSSOT-89Designed for low noise amplifier at VHF, UHF and CATV band.MECHANICAL DATA Case: SOT-89 Case Material: Molded Plastic. UL flammabil

 8.35. Size:797K  cn hottech
2sc3356.pdf

2SC3355 2SC3355

2SC3356BIPOLAR TRANSISTOR (NPN)FEATURES High power gain Low Noise For Low Noise Amplifier at UHF/VHF/CATV Band Surface Mount deviceSOT-23MECHANICAL DATA Case: SOT- 23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise noted)AParameter Symbo

 8.36. Size:601K  cn yw
2sc3356-sc1-r-r 2sc3356-sf3-r-r 2sc3356-sd3-r-r 2sc3356-t93-r-k.pdf

2SC3355 2SC3355

2SC3356 (NPN) High-Frequency Amplifier Transistor 1TO-92 3FEATURES 2* SOT231Low noise and high gain. NF=1.1dB Typ. f=1.0 GHz Ga=11dB Typ.@Vce=10V,Ic=7mA3* High power gain. 21MAG=13dB Typ.@Vce=10V,Ic=20mAf=1.0 GHz SOT-23-3L321SOT-5231:B 2:E 3:C

 8.37. Size:188K  inchange semiconductor
2sc3357.pdf

2SC3355 2SC3355

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC3357DESCRIPTIONLow Noise and High GainNF = 1.1 dB TYP., G = 8.0 dB TYP.a@V = 10 V, I = 7 mA, f = 1.0 GHzCE CNF = 1.8 dB TYP., G = 9.0 dB TYP.a@V = 10 V, I = 40 mA, f = 1.0 GHzCE C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned

 8.38. Size:196K  inchange semiconductor
2sc3352.pdf

2SC3355 2SC3355

isc Silicon NPN Power Transistor 2SC3352DESCRIPTION Collector-Emiiter Sustaining Voltage-: V = 500V(Min.)CEO(SUS)Low Collector Saturation Voltage: V = 1.0V(Max.)@ I = 1ACE(sat) CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATI

 8.39. Size:197K  inchange semiconductor
2sc3353a.pdf

2SC3355 2SC3355

isc Silicon NPN Power Transistor 2SC3353ADESCRIPTION Collector-Emiiter Sustaining Voltage-: V = 500V(Min.)CEO(SUS)Low Collector Saturation Voltage: V = 1.0V(Max.)@ I = 3ACE(sat) CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RAT

 8.40. Size:197K  inchange semiconductor
2sc3353.pdf

2SC3355 2SC3355

isc Silicon NPN Power Transistor 2SC3353DESCRIPTION Collector-Emiiter Sustaining Voltage-: V = 500V(Min.)CEO(SUS)Low Collector Saturation Voltage: V = 1.0V(Max.)@ I = 3ACE(sat) CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATI

 8.41. Size:399K  inchange semiconductor
2sc3356.pdf

2SC3355 2SC3355

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC3356DESCRIPTIONLow Noise and High GainNF = 1.1 dB TYP., G = 11 dB TYP.a@V = 10 V, I = 7 mA, f = 1.0 GHzCE CHigh Power GainMAG = 13 dB TYP.@V = 10 V, I = 20 mA, f = 1.0 GHzCE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low noise amplifier at

Datasheet: 2SC3348 , 2SC3349 , 2SC335 , 2SC3350 , 2SC3351 , 2SC3352 , 2SC3353 , 2SC3354 , 2SD2499 , 2SC3356 , 2SC3357 , 2SC3358 , 2SC3359 , 2SC336 , 2SC3360 , 2SC3361 , 2SC3361S4 .

 

 
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