All Transistors. 2SC3360 Datasheet

 

2SC3360 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SC3360
   SMD Transistor Code: N15_N16_N17
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.36 W
   Maximum Collector-Base Voltage |Vcb|: 200 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Forward Current Transfer Ratio (hFE), MIN: 90
   Noise Figure, dB: -
   Package: TO236

 2SC3360 Transistor Equivalent Substitute - Cross-Reference Search

   

2SC3360 Datasheet (PDF)

 ..1. Size:194K  nec
2sc3360.pdf

2SC3360
2SC3360

 ..2. Size:1217K  kexin
2sc3360.pdf

2SC3360
2SC3360

SMD Type TransistorsNPN Transistors2SC3360SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features High voltage VCEO=200V1 2 High DC Current Gain hFE=90 to 450+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.1 Complementary to 2SA13301.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage

 8.1. Size:128K  sanyo
2sa1331 2sc3361.pdf

2SC3360
2SC3360

Ordering number:EN3217PNP/NPN Epitaxial Planar Silicon Transistors2SA1331/2SC3361High-Speed Switching ApplicationsFeatures Package Dimensions Fast switching speed.unit:mm High breakdown voltage.2018A Small-sized package permitting the 2SA1331/[2SA1331/2SC3361]2SC3361-applied sets to be made small and slim.Switching Time Test CircuitC : CollectorB : Base(Fo

 8.2. Size:41K  hitachi
2sc3365.pdf

2SC3360
2SC3360

2SC3365Silicon NPN Triple DiffusedApplicationHigh voltage, high speed and high power switchingOutlineTO-3P1. Base2. Collector(Flange)3. Emitter1232SC3365Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 500 VCollector to emitter voltage VCEO 400 VEmitter to base voltage VEBO 10 VCollector current IC 10 ACollector

 8.3. Size:56K  no
2sc3369.pdf

2SC3360

 8.4. Size:1459K  kexin
2sc3361.pdf

2SC3360
2SC3360

SMD Type TransistorsNPN Transistors2SC3361SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Fast switching speed.1 2 High breakdown voltage.+0.1+0.050.95 -0.1 0.1 -0.01 Complementary to 2SA1331+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60

 8.5. Size:217K  inchange semiconductor
2sc3365.pdf

2SC3360
2SC3360

isc Silicon NPN Power Transistor 2SC3365DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed and high powerswitching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2N6578 | 2N416 | 2N6690 | 2N407 | P210S

 

 
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