2N1988 Datasheet. Specs and Replacement
Type Designator: 2N1988 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.6 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 40 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 35
Package: TO5
2N1988 Substitution
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2N1988 datasheet
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Detailed specifications: 2N1980, 2N1981, 2N1982, 2N1983, 2N1984, 2N1985, 2N1986, 2N1987, 2SD313, 2N1989, 2N199, 2N1990, 2N1990-46, 2N1990N, 2N1990R, 2N1990S, 2N1990W
Keywords - 2N1988 pdf specs
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History: 2N1983 | BD648
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