All Transistors. 2SC3368 Datasheet

 

2SC3368 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SC3368
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 36 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 135 °C
   Transition Frequency (ft): 2500 MHz
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO131

 2SC3368 Transistor Equivalent Substitute - Cross-Reference Search

   

2SC3368 Datasheet (PDF)

 8.1. Size:128K  sanyo
2sa1331 2sc3361.pdf

2SC3368
2SC3368

Ordering number:EN3217PNP/NPN Epitaxial Planar Silicon Transistors2SA1331/2SC3361High-Speed Switching ApplicationsFeatures Package Dimensions Fast switching speed.unit:mm High breakdown voltage.2018A Small-sized package permitting the 2SA1331/[2SA1331/2SC3361]2SC3361-applied sets to be made small and slim.Switching Time Test CircuitC : CollectorB : Base(Fo

 8.2. Size:194K  nec
2sc3360.pdf

2SC3368
2SC3368

 8.3. Size:41K  hitachi
2sc3365.pdf

2SC3368
2SC3368

2SC3365Silicon NPN Triple DiffusedApplicationHigh voltage, high speed and high power switchingOutlineTO-3P1. Base2. Collector(Flange)3. Emitter1232SC3365Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 500 VCollector to emitter voltage VCEO 400 VEmitter to base voltage VEBO 10 VCollector current IC 10 ACollector

 8.4. Size:56K  no
2sc3369.pdf

2SC3368

 8.5. Size:1459K  kexin
2sc3361.pdf

2SC3368
2SC3368

SMD Type TransistorsNPN Transistors2SC3361SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Fast switching speed.1 2 High breakdown voltage.+0.1+0.050.95 -0.1 0.1 -0.01 Complementary to 2SA1331+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60

 8.6. Size:1217K  kexin
2sc3360.pdf

2SC3368
2SC3368

SMD Type TransistorsNPN Transistors2SC3360SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features High voltage VCEO=200V1 2 High DC Current Gain hFE=90 to 450+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.1 Complementary to 2SA13301.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage

 8.7. Size:217K  inchange semiconductor
2sc3365.pdf

2SC3368
2SC3368

isc Silicon NPN Power Transistor 2SC3365DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed and high powerswitching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: BD785

 

 
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