2SC337 Specs and Replacement
Type Designator: 2SC337
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.02 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO18
- BJT ⓘ Cross-Reference Search
2SC337 datasheet
0.5. Size:197K inchange semiconductor
2sc3376.pdf 
isc Silicon NPN Power Transistor 2SC3376 DESCRIPTION Collector-Emiiter Breakdown Voltage- V = 800V(Min.) (BR)CEO High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications. High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a ... See More ⇒
0.6. Size:189K inchange semiconductor
2sc3371.pdf
isc Silicon NPN Power Transistor 2SC3371 DESCRIPTION Collector-Emiiter Sustaining Voltage- V = 500V(Min.) CEO(SUS) Low Collector Saturation Voltage V = 1.0V(Max.)@ I = 8A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS (... See More ⇒
Detailed specifications: 2SC3362, 2SC3363, 2SC3364, 2SC3365, 2SC3366, 2SC3367, 2SC3368, 2SC3369, 2SC2625, 2SC3370, 2SC3371, 2SC3372, 2SC3373, 2SC3374, 2SC3375, 2SC3376, 2SC3377
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