2N1990 Datasheet. Specs and Replacement
Type Designator: 2N1990 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.6 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 40 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO5
2N1990 Substitution
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2N1990 datasheet
2N1991 Dimensions in mm (inches). Bipolar PNP Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 20V dia. IC = 0.3A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 ... See More ⇒
Detailed specifications: 2N1983, 2N1984, 2N1985, 2N1986, 2N1987, 2N1988, 2N1989, 2N199, SS8050, 2N1990-46, 2N1990N, 2N1990R, 2N1990S, 2N1990W, 2N1991, 2N1991S, 2N1992
Keywords - 2N1990 pdf specs
2N1990 cross reference
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History: 2N1989
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