All Transistors. 2N1990 Datasheet

 

2N1990 Datasheet and Replacement


   Type Designator: 2N1990
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.6 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 40 MHz
   Collector Capacitance (Cc): 20 pF
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO5
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2N1990 Datasheet (PDF)

 9.1. Size:11K  semelab
 2n1991.pdf pdf_icon

2N1990

2N1991Dimensions in mm (inches). Bipolar PNP Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar PNP Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 20V dia.IC = 0.3A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1

Datasheet: 2N1983 , 2N1984 , 2N1985 , 2N1986 , 2N1987 , 2N1988 , 2N1989 , 2N199 , BD135 , 2N1990-46 , 2N1990N , 2N1990R , 2N1990S , 2N1990W , 2N1991 , 2N1991S , 2N1992 .

History: KTB2510 | 2SA3802 | D29E2 | DTC043XUB | BDS28A | 2N2931 | 2SCR544P

Keywords - 2N1990 transistor datasheet

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