2SC3409 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC3409
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage |Vcb|: 900 V
Maximum Collector-Emitter Voltage |Vce|: 800 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 45
Noise Figure, dB: -
Package: TO218
2SC3409 Transistor Equivalent Substitute - Cross-Reference Search
2SC3409 Datasheet (PDF)
2sc3409.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3409 DESCRIPTION With TO-3PN package High breakdown voltage Fast switching speed Wide area of safe operation APPLICATIONS For switching regulator applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute m
2sc3409.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3409DESCRIPTIONLow Collector Saturation Voltage100% avalanche testedGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in humidifier , DC/DC converter andgeneral purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMB
2sc3405.pdf
2SC3405 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC3405 Industrial Applications Switching Regulator and High Voltage Switching Unit: mm Applications High Speed DC-DC Converter Applications Excellent switching times: tr = 1.0 s (max) t = 1.0 s (max), (I = 0.3 A) f C High collector breakdown voltage: V = 800 V CEOMaximum Ratings (Ta = 25C) Cha
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
