2N1991 Datasheet and Replacement
Type Designator: 2N1991
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.6 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 40 MHz
Collector Capacitance (Cc): 45 pF
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO5
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2N1991 Datasheet (PDF)
2n1991.pdf

2N1991Dimensions in mm (inches). Bipolar PNP Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar PNP Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 20V dia.IC = 0.3A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1
Datasheet: 2N1989 , 2N199 , 2N1990 , 2N1990-46 , 2N1990N , 2N1990R , 2N1990S , 2N1990W , 2SD313 , 2N1991S , 2N1992 , 2N1993 , 2N1994 , 2N1995 , 2N1996 , 2N1997 , 2N1998 .
History: D29E2 | BDS28A | KTB2510 | 2SB1197KGP | 2SA3802 | LBC846ADW1T1G | BUX72
Keywords - 2N1991 transistor datasheet
2N1991 cross reference
2N1991 equivalent finder
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History: D29E2 | BDS28A | KTB2510 | 2SB1197KGP | 2SA3802 | LBC846ADW1T1G | BUX72



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