2SC3420B Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC3420B
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 5 pF
Forward Current Transfer Ratio (hFE), MIN: 300
Noise Figure, dB: -
Package: ISO126
2SC3420B Transistor Equivalent Substitute - Cross-Reference Search
2SC3420B Datasheet (PDF)
2sc3420.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3420 DESCRIPTION With TO-126 package High DC current gain Low saturation voltage High collector power dissipation APPLICATIONS Storobo flash applications Medium power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum rat
2sc3420.pdf
2SC3420 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-126F NPN Silicon NPN transistor in a TO-126F Plastic Package. / Features ,, High DC current gain, low saturation voltage,high collector power dissipation. / Applications ,
2sc3420 3da3420.pdf
2SC3420(3DA3420) NPN /SILICON NPN TRANSISTOR :, Purpose: Storobo flash applications, medium power amplifier applications. :,, Features: High DC current gain, low saturation voltagehigh collector power dissipation. /Absolute ma
2sc3420.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3420DESCRIPTIONHigh Collector Current-I = 5.0ACDC Current Gain-: h = 70(Min)@I = 4AFE CLow Saturation Voltage: V = 1.0V(Max)@I = 4ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSStrobe flash applications.Medium power amplifier applications.
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
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