2SC3443 Datasheet and Replacement

ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble

SMD Type TransistorsNPN Transistors2SC34431.70 0.1 Features High hFE :hFE=150 to 800 High collector current Low collector to emitter saturation voltage0.42 0.10.46 0.1 High collector dissipation Pc=500mW Small package for mounting1.Base Complementary to 2SA13632.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol

Ordering number:EN1544BNPN Triple Diffused Planar Silicon Transistor2SC3446500V/3A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage and high reliability.unit:mm Fast switching speed (tf : 0.1 s typ).2010C Wide ASO.[2SC3446] Adoption of MBIT process.1 : BaseJEDEC : TO-220AB2 : CollectorEIAJ : SC-463 : EmitterSpecif

Ordering number:EN1545BNPN Triple Diffused Planar Silicon Transistor2SC3447500V/5A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage and high reliability.unit:mm Fast switching speed (tf : 0.1 s typ).2010C Wide ASO.[2SC3447] Adoption of MBIT process.1 : BaseJEDEC : TO-220AB2 : CollectorEIAJ : SC-463 : EmitterSpecif

Ordering number:EN1572CNPN Triple Diffused Planar Silicon Transistor2SC3449500V/7A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage and high reliability.unit:mm Fast switching speed (tf : 0.1 s typ).2022A Wide ASO.[2SC3449] Adoption of MBIT process.1 : Base2 : Collector3 : EmitterSANYO : TO-3PBSpecificationsAbsolu

Ordering number:EN1546BNPN Triple Diffused Planar Silicon Transistor2SC3448500V/4A Switching Regulator ApplicationsApplications Package Dimensions Switching regulator. unit:mm2022AFeatures [2SC3448] High breakdown voltage and high reliability. Fast switching speed (tf : 0.1 s typ). Wide ASO. Adoption of MBIT process.1 : Base2 : Collector3 : Emitter

ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with

ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble

http://www.idc-com.co.jp 854-0065 6-41

JMnic Product Specification Silicon NPN Power Transistors 2SC3447 DESCRIPTION With TO-220C package High breakdown voltage and high reliability Fast switching speed. Wide ASO (Safe Operating Area) APPLICATIONS 500V/5A switching regulator applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(

SMD Type TransistorsNPN Transistors2SC3440SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features Low collector to emitter saturation voltage. Excellent linearity nof DC forward current gain.1 2 Super mini package for easy mounting. +0.1+0.050.95 -0.1 0.1-0.01+0.11.9 -0.1 High collector current. Complementary to 2SA13651.Base2.Emitter

SMD Type TransistorsNPN Transistors2SC3444 Features1.70 0.1 High Voltage High collector current Low collector to emitter saturation voltage High collector dissipation Pc=500mW0.42 0.10.46 0.1 Small package for mounting Complementary to 2SA13641.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit

SMD Type TransistorsNPN Transistors2SC3441SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=400mA1 2 Collector Emitter Voltage VCEO=50V+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.1 Complementary to 2SA13661.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector

isc Silicon NPN Power Transistor 2SC3446DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 500V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

isc Silicon NPN Power Transistor 2SC3447DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 500V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3449DESCRIPTIONLow Collector Saturation VoltageHigh breakdown voltage and high reliabilityFast switching speedWide ASONPN triple diffused planar silicon transistor100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator ap

isc Silicon NPN Power Transistor 2SC3448DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 500V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO