2N1997 Datasheet and Replacement
Type Designator: 2N1997
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 100 °C
Transition Frequency (ft): 3 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO5
2N1997 Transistor Equivalent Substitute - Cross-Reference Search
2N1997 Datasheet (PDF)
2n1991.pdf
2N1991 Dimensions in mm (inches). Bipolar PNP Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 20V dia. IC = 0.3A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 ... See More ⇒
Datasheet: 2N1990W , 2N1991 , 2N1991S , 2N1992 , 2N1993 , 2N1994 , 2N1995 , 2N1996 , 2N4401 , 2N1998 , 2N1999 , 2N200 , 2N2000 , 2N2001 , 2N2002 , 2N2003 , 2N2004 .
History: UN421L | N0202S | 2N1999
Keywords - 2N1997 transistor datasheet
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History: UN421L | N0202S | 2N1999
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