2SC3462M Specs and Replacement
Type Designator: 2SC3462M
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 1100 V
Maximum Collector-Emitter Voltage |Vce|: 800 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 4.5 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 15 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO3
- BJT ⓘ Cross-Reference Search
2SC3462M datasheet
7.1. Size:195K inchange semiconductor
2sc3462.pdf 
isc Silicon NPN Power Transistor 2SC3462 DESCRIPTION High Breakdown Voltage- V = 1100V(Min) (BR)CBO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Bas... See More ⇒
8.1. Size:127K sanyo
2sc3466.pdf
Ordering number EN2487A NPN Triple Diffused Planar Type Silicon Transistor 2SC3466 Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit mm Fast switching speed. 2022A Wide ASO. [2SC3466] 1 Base 2 Collector 3 Emitter SANYO TO-3PB Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Co... See More ⇒
8.2. Size:109K sanyo
2sc3461.pdf
Ordering number EN1596C NPN Triple Diffused Planar Type Silicon Transistor 2SC3461 800V/8A Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit mm Fast switching speed (tf 0.1 s typ). 2022A Wide ASO. [2SC3461] Adoption of MBIT process. 1 Base 2 Collector 3 Emitter SANYO TO-3PB Specifications A... See More ⇒
8.3. Size:138K sanyo
2sa1370 2sc3467.pdf
Ordering number EN1412C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1370/2SC3467 High-Definition CRT Display, Video Output Applications Use Package Dimensions Color TV chroma output and high breakdown voltage unit mm driver. 2006A [2SA1370/2SC3467] Features High breakdown voltage VCEO 200V. Small reverse transfer capacitance and excellent high frequency charac... See More ⇒
8.4. Size:139K sanyo
2sa1371 2sc3468.pdf
Ordering number EN1413C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1371/2SC3468 High-Definition CRT Display, Video Output Applications Use Package Dimensions Color TV chroma output and high breakdown voltage unit mm driver. 2006A [2SA1371/2SC3468] Features High breakdown votage VCEO 300V. Small reverse transfer capacitance and excellent high frequency charact... See More ⇒
8.5. Size:112K sanyo
2sc3460.pdf
Ordering number EN1594B NPN Triple Diffused Planar Silicon Transistor 2SC3460 800V/6A Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit mm Fast switching speed (tf 0.1 s typ). 2022A Wide ASO. [2SC3460] Adoption of MBIT process. 1 Base 2 Collector 3 Emitter SANYO TO-3PB Specifications Absolu... See More ⇒
8.6. Size:128K utc
2sc3468.pdf
UTC 2SC3468 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FOR VIDEO OUTPUT OF HIGH-DEFINITION CRT DISPLAYS FEATURES 1 * High breakdown voltage VCBO, VCEO 300V * Small reverse transfer capacitance and excellent high frequency characteristicF SOT-89 1 BASE 2 COLLECTOR 3 EMITTER *Pb-free plating product number 2SC3468L ABSOLUTE MAXIMUM RATINGS (Ta = 25 ) ... See More ⇒
8.7. Size:216K jmnic
2sc3465.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC3465 DESCRIPTION With TO-3 package High voltage Fast switching speed APPLICATIONS For switching regulator applications PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE U... See More ⇒
8.8. Size:237K jmnic
2sc3466.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3466 DESCRIPTION With TO-3PN package High breakdown voltage and high reliability. Fast switching speed Wide area of safe operation APPLICATIONS Switching regulator applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 E... See More ⇒
8.9. Size:349K jmnic
2sc3461.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC3461 DESCRIPTION With TO-3PN package High breakdown voltage and high reliability. Fast switching speed Wide ASO(Safe Operating Area) APPLICATIONS 800V/8A switching regulator applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN)... See More ⇒
8.10. Size:226K jmnic
2sc3460.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3460 DESCRIPTION With TO-3PN package High breakdown voltage and high reliability. Fast switching speed Wide area of safe operation APPLICATIONS 800V/6A switching regulator applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symb... See More ⇒
8.11. Size:195K inchange semiconductor
2sc3465.pdf
isc Silicon NPN Power Transistor 2SC3465 DESCRIPTION High Breakdown Voltage- V = 1100V(Min) (BR)CBO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Bas... See More ⇒
8.12. Size:202K inchange semiconductor
2sc3466.pdf
isc Silicon NPN Power Transistor 2SC3466 DESCRIPTION High Breakdown Voltage- V = 1200V(Min) (BR)CBO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Bas... See More ⇒
8.13. Size:203K inchange semiconductor
2sc3461.pdf
isc Silicon NPN Power Transistor 2SC3461 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA... See More ⇒
8.14. Size:203K inchange semiconductor
2sc3460.pdf
isc Silicon NPN Power Transistor 2SC3460 DESCRIPTION High Breakdown Voltage- V = 1100V(Min) (BR)CBO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Bas... See More ⇒
Detailed specifications: 2SC3460M, 2SC3461, 2SC3461K, 2SC3461L, 2SC3461M, 2SC3462, 2SC3462K, 2SC3462L, S9014, 2SC3463, 2SC3463K, 2SC3463L, 2SC3463M, 2SC3464, 2SC3464K, 2SC3464L, 2SC3464M
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