All Transistors. 2SC3467E Datasheet

 

2SC3467E Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SC3467E
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 200 V
   Maximum Collector-Emitter Voltage |Vce|: 200 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 1.7 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO92

 2SC3467E Transistor Equivalent Substitute - Cross-Reference Search

   

2SC3467E Datasheet (PDF)

 7.1. Size:138K  sanyo
2sa1370 2sc3467.pdf

2SC3467E
2SC3467E

Ordering number:EN1412CPNP/NPN Epitaxial Planar Silicon Transistors2SA1370/2SC3467High-Definition CRT Display,Video Output ApplicationsUse Package Dimensions Color TV chroma output and high breakdown voltageunit:mmdriver.2006A[2SA1370/2SC3467]Features High breakdown voltage : VCEO 200V. Small reverse transfer capacitance and excellent highfrequency charac

 8.1. Size:127K  sanyo
2sc3466.pdf

2SC3467E
2SC3467E

Ordering number:EN2487ANPN Triple Diffused Planar Type Silicon Transistor2SC3466Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage and high reliability.unit:mm Fast switching speed.2022A Wide ASO.[2SC3466]1 : Base2 : Collector3 : EmitterSANYO : TO-3PBSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Co

 8.2. Size:109K  sanyo
2sc3461.pdf

2SC3467E
2SC3467E

Ordering number:EN1596CNPN Triple Diffused Planar Type Silicon Transistor2SC3461800V/8A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage and high reliability.unit:mm Fast switching speed (tf : 0.1 s typ).2022A Wide ASO.[2SC3461] Adoption of MBIT process.1 : Base2 : Collector3 : EmitterSANYO : TO-3PBSpecificationsA

 8.3. Size:139K  sanyo
2sa1371 2sc3468.pdf

2SC3467E
2SC3467E

Ordering number:EN1413CPNP/NPN Epitaxial Planar Silicon Transistors2SA1371/2SC3468High-Definition CRT Display,Video Output ApplicationsUse Package Dimensions Color TV chroma output and high breakdown voltageunit:mmdriver.2006A[2SA1371/2SC3468]Features High breakdown votage : VCEO 300V. Small reverse transfer capacitance and excellent highfrequency charact

 8.4. Size:112K  sanyo
2sc3460.pdf

2SC3467E
2SC3467E

Ordering number:EN1594BNPN Triple Diffused Planar Silicon Transistor2SC3460800V/6A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage and high reliability.unit:mm Fast switching speed (tf : 0.1 s typ).2022A Wide ASO.[2SC3460] Adoption of MBIT process.1 : Base2 : Collector3 : EmitterSANYO : TO-3PBSpecificationsAbsolu

 8.5. Size:128K  utc
2sc3468.pdf

2SC3467E
2SC3467E

UTC 2SC3468 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FOR VIDEO OUTPUT OF HIGH-DEFINITION CRT DISPLAYS FEATURES 1* High breakdown voltage: VCBO, VCEO300V * Small reverse transfer capacitance and excellent high frequency characteristicF SOT-891: BASE 2: COLLECTOR 3: EMITTER *Pb-free plating product number: 2SC3468LABSOLUTE MAXIMUM RATINGS (Ta = 25)

 8.6. Size:216K  jmnic
2sc3465.pdf

2SC3467E
2SC3467E

Product Specification www.jmnic.comSilicon NPN Power Transistors 2SC3465 DESCRIPTION With TO-3 package High voltage Fast switching speed APPLICATIONS For switching regulator applications PINNING(see fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE U

 8.7. Size:237K  jmnic
2sc3466.pdf

2SC3467E
2SC3467E

JMnic Product Specification Silicon NPN Power Transistors 2SC3466 DESCRIPTION With TO-3PN package High breakdown voltage and high reliability. Fast switching speed Wide area of safe operation APPLICATIONS Switching regulator applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 E

 8.8. Size:349K  jmnic
2sc3461.pdf

2SC3467E
2SC3467E

Product Specification www.jmnic.comSilicon NPN Power Transistors 2SC3461 DESCRIPTION With TO-3PN package High breakdown voltage and high reliability. Fast switching speed Wide ASO(Safe Operating Area) APPLICATIONS 800V/8A switching regulator applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN)

 8.9. Size:226K  jmnic
2sc3460.pdf

2SC3467E
2SC3467E

JMnic Product Specification Silicon NPN Power Transistors 2SC3460 DESCRIPTION With TO-3PN package High breakdown voltage and high reliability. Fast switching speed Wide area of safe operation APPLICATIONS 800V/6A switching regulator applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symb

 8.10. Size:195K  inchange semiconductor
2sc3465.pdf

2SC3467E
2SC3467E

isc Silicon NPN Power Transistor 2SC3465DESCRIPTIONHigh Breakdown Voltage-: V = 1100V(Min)(BR)CBOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator ApplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Bas

 8.11. Size:202K  inchange semiconductor
2sc3466.pdf

2SC3467E
2SC3467E

isc Silicon NPN Power Transistor 2SC3466DESCRIPTIONHigh Breakdown Voltage-: V = 1200V(Min)(BR)CBOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator ApplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Bas

 8.12. Size:195K  inchange semiconductor
2sc3462.pdf

2SC3467E
2SC3467E

isc Silicon NPN Power Transistor 2SC3462DESCRIPTIONHigh Breakdown Voltage-: V = 1100V(Min)(BR)CBOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator ApplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Bas

 8.13. Size:203K  inchange semiconductor
2sc3461.pdf

2SC3467E
2SC3467E

isc Silicon NPN Power Transistor 2SC3461DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switchingapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA

 8.14. Size:203K  inchange semiconductor
2sc3460.pdf

2SC3467E
2SC3467E

isc Silicon NPN Power Transistor 2SC3460DESCRIPTIONHigh Breakdown Voltage-: V = 1100V(Min)(BR)CBOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator ApplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Bas

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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