2SC3469 Datasheet, Equivalent, Cross Reference Search

Ordering number:EN2487ANPN Triple Diffused Planar Type Silicon Transistor2SC3466Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage and high reliability.unit:mm Fast switching speed.2022A Wide ASO.[2SC3466]1 : Base2 : Collector3 : EmitterSANYO : TO-3PBSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Co

Ordering number:EN1596CNPN Triple Diffused Planar Type Silicon Transistor2SC3461800V/8A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage and high reliability.unit:mm Fast switching speed (tf : 0.1 s typ).2022A Wide ASO.[2SC3461] Adoption of MBIT process.1 : Base2 : Collector3 : EmitterSANYO : TO-3PBSpecificationsA

Ordering number:EN1412CPNP/NPN Epitaxial Planar Silicon Transistors2SA1370/2SC3467High-Definition CRT Display,Video Output ApplicationsUse Package Dimensions Color TV chroma output and high breakdown voltageunit:mmdriver.2006A[2SA1370/2SC3467]Features High breakdown voltage : VCEO 200V. Small reverse transfer capacitance and excellent highfrequency charac

Ordering number:EN1413CPNP/NPN Epitaxial Planar Silicon Transistors2SA1371/2SC3468High-Definition CRT Display,Video Output ApplicationsUse Package Dimensions Color TV chroma output and high breakdown voltageunit:mmdriver.2006A[2SA1371/2SC3468]Features High breakdown votage : VCEO 300V. Small reverse transfer capacitance and excellent highfrequency charact

Ordering number:EN1594BNPN Triple Diffused Planar Silicon Transistor2SC3460800V/6A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage and high reliability.unit:mm Fast switching speed (tf : 0.1 s typ).2022A Wide ASO.[2SC3460] Adoption of MBIT process.1 : Base2 : Collector3 : EmitterSANYO : TO-3PBSpecificationsAbsolu

UTC 2SC3468 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FOR VIDEO OUTPUT OF HIGH-DEFINITION CRT DISPLAYS FEATURES 1* High breakdown voltage: VCBO, VCEO300V * Small reverse transfer capacitance and excellent high frequency characteristicF SOT-891: BASE 2: COLLECTOR 3: EMITTER *Pb-free plating product number: 2SC3468LABSOLUTE MAXIMUM RATINGS (Ta = 25)

Product Specification www.jmnic.comSilicon NPN Power Transistors 2SC3465 DESCRIPTION With TO-3 package High voltage Fast switching speed APPLICATIONS For switching regulator applications PINNING(see fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE U

JMnic Product Specification Silicon NPN Power Transistors 2SC3466 DESCRIPTION With TO-3PN package High breakdown voltage and high reliability. Fast switching speed Wide area of safe operation APPLICATIONS Switching regulator applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 E

Product Specification www.jmnic.comSilicon NPN Power Transistors 2SC3461 DESCRIPTION With TO-3PN package High breakdown voltage and high reliability. Fast switching speed Wide ASO(Safe Operating Area) APPLICATIONS 800V/8A switching regulator applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN)

JMnic Product Specification Silicon NPN Power Transistors 2SC3460 DESCRIPTION With TO-3PN package High breakdown voltage and high reliability. Fast switching speed Wide area of safe operation APPLICATIONS 800V/6A switching regulator applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symb

isc Silicon NPN Power Transistor 2SC3465DESCRIPTIONHigh Breakdown Voltage-: V = 1100V(Min)(BR)CBOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator ApplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Bas

isc Silicon NPN Power Transistor 2SC3466DESCRIPTIONHigh Breakdown Voltage-: V = 1200V(Min)(BR)CBOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator ApplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Bas

isc Silicon NPN Power Transistor 2SC3462DESCRIPTIONHigh Breakdown Voltage-: V = 1100V(Min)(BR)CBOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator ApplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Bas

isc Silicon NPN Power Transistor 2SC3461DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switchingapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA

isc Silicon NPN Power Transistor 2SC3460DESCRIPTIONHigh Breakdown Voltage-: V = 1100V(Min)(BR)CBOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator ApplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Bas