2SC3475 Specs and Replacement
Type Designator: 2SC3475
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 20 MHz
Collector Capacitance (Cc): 70 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Package: TO220
2SC3475 Substitution
- BJT ⓘ Cross-Reference Search
2SC3475 datasheet
isc Silicon NPN Power Transistor 2SC3475 DESCRIPTION Low Collector Saturation Voltage V = 0.6V(Max)@ I = 2A CE(sat) C High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed switching applications. High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U... See More ⇒
2SC3474 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3474 Industrial Applications Switching Applications Unit mm Solenoid Drive Applications High DC current gain hFE = 500 (min) (I = 400 mA) C Low saturation voltage V = 0.5 V (max) (I = 300 mA) CE (sat) C Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 80 V Coll... See More ⇒
2SC3470 Silicon NPN Epitaxial Application Low frequency amplifier Outline SPAK 1. Emitter 1 2 2. Collector 3 3. Base 2SC3470 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 55 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 5V Collector current IC 100 mA Collector power dissipation PC 300 mW Junction temper... See More ⇒
Detailed specifications: 2SC3469D, 2SC3469E, 2SC3469F, 2SC347, 2SC3470, 2SC3471, 2SC3472, 2SC3474, NJW0281G, 2SC3475O, 2SC3475Y, 2SC3476, 2SC3477, 2SC3478, 2SC3478A, 2SC3479, 2SC348
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