2SC3481 Specs and Replacement
Type Designator: 2SC3481
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 120 W
Maximum Collector-Base Voltage |Vcb|: 1500 V
Maximum Collector-Emitter Voltage |Vce|: 800 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO247
- BJT ⓘ Cross-Reference Search
2SC3481 datasheet
..2. Size:199K inchange semiconductor
2sc3481.pdf 
isc Silicon NPN Power Transistor 2SC3481 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high definition CRT display horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ... See More ⇒
8.6. Size:153K jmnic
2sc3486.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3486 DESCRIPTION With TO-3PN package High voltage ,high speed Wide area of safe operation APPLICATIONS For color TV display horizontal output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximu... See More ⇒
8.7. Size:199K inchange semiconductor
2sc3482.pdf
isc Silicon NPN Power Transistor 2SC3482 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high definition CRT display horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ... See More ⇒
8.8. Size:198K inchange semiconductor
2sc3486.pdf
isc Silicon NPN Power Transistor 2SC3486 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high definition CRT display horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ... See More ⇒
8.9. Size:199K inchange semiconductor
2sc3480.pdf
isc Silicon NPN Power Transistor 2SC3480 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high definition CRT display horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ... See More ⇒
Detailed specifications: 2SC3475Y, 2SC3476, 2SC3477, 2SC3478, 2SC3478A, 2SC3479, 2SC348, 2SC3480, 2SC2383, 2SC3482, 2SC3483, 2SC3484, 2SC3485, 2SC3486, 2SC3487, 2SC3488, 2SC3488G
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