2SC3488O Datasheet and Replacement

   Type Designator: 2SC3488O
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 300 MHz
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: TO92

2SC3488O Substitution

- BJT ⓘ Cross-Reference Search

2SC3488O Datasheet (PDF)

8.1. Size:40K sanyo
2sc3482.pdf pdf_icon

8.2. Size:131K sanyo
2sc3481.pdf pdf_icon

8.3. Size:41K sanyo
2sc3486.pdf pdf_icon

8.4. Size:52K sanyo
2sc3484.pdf pdf_icon

8.5. Size:37K sanyo
2sc3483.pdf pdf_icon

8.6. Size:118K sanyo
2sc3485.pdf pdf_icon

8.7. Size:153K jmnic
2sc3486.pdf pdf_icon

JMnic Product Specification Silicon NPN Power Transistors 2SC3486 DESCRIPTION With TO-3PN package High voltage ,high speed Wide area of safe operation APPLICATIONS For color TV display horizontal output applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximu

8.8. Size:199K inchange semiconductor
2sc3482.pdf pdf_icon

isc Silicon NPN Power Transistor 2SC3482DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high definition CRT display horizontaldeflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25

8.9. Size:199K inchange semiconductor
2sc3481.pdf pdf_icon

isc Silicon NPN Power Transistor 2SC3481DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high definition CRT display horizontaldeflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25

8.10. Size:198K inchange semiconductor
2sc3486.pdf pdf_icon

isc Silicon NPN Power Transistor 2SC3486DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high definition CRT display horizontaldeflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25

8.11. Size:199K inchange semiconductor
2sc3480.pdf pdf_icon

isc Silicon NPN Power Transistor 2SC3480DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high definition CRT display horizontaldeflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25

Datasheet: 2SC3482 , 2SC3483 , 2SC3484 , 2SC3485 , 2SC3486 , 2SC3487 , 2SC3488 , 2SC3488G , 2SC5198 , 2SC3488Y , 2SC3489 , 2SC349 , 2SC3490 , 2SC3491 , 2SC3492 , 2SC3493 , 2SC3494 .