All Transistors. 2SC3502F Datasheet

 

2SC3502F Datasheet and Replacement


   Type Designator: 2SC3502F
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 5 W
   Maximum Collector-Base Voltage |Vcb|: 200 V
   Maximum Collector-Emitter Voltage |Vce|: 200 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 1.2 pF
   Forward Current Transfer Ratio (hFE), MIN: 160
   Noise Figure, dB: -
   Package: TO126
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2SC3502F Datasheet (PDF)

 7.1. Size:157K  sanyo
 2sc3502.pdf pdf_icon

2SC3502F

Ordering number:EN1425CPNP/NPN Epitaxial Planar Silicon Transistors2SA1380/2SC3502Ultrahigh-Definition CRT Display,Video Output ApplicationsFeatures Package Dimensions High breakdown voltage : VCEO 200V.unit:mm Small reverse transfer capacitance and excellent2009Bhigh-frequnecy characteristics[2SA1380/2SC3502]: Cre=1.2pF (NPN), 1.7pF (PNP), VCB=30V. Adoptio

 7.2. Size:218K  foshan
 2sc3502 3da3502.pdf pdf_icon

2SC3502F

2SC3502(3DA3502) NPN /SILICON NPN TRANSISTOR : CRT Purpose: Ultrahigh-definition CRT display, video output applications. :,, Features: High breakdown voltage, small reverse transfer capacitance and excellent high frequency characteristic. /Absolute maxim

 7.3. Size:195K  inchange semiconductor
 2sc3502.pdf pdf_icon

2SC3502F

isc Silicon NPN Power Transistor 2SC3502DESCRIPTIONCollectorEmitter Breakdown Voltage: V = 200 V(BR)CEOComplement to Type 2SA1380Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for ultrahigh-definition CRT display, video out-put applicaitonsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

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History: 2SC1262 | 2SA1483 | BC167 | ECG2360 | BDX85B | BDX11 | SGSF321

Keywords - 2SC3502F transistor datasheet

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