2SC3502F Specs and Replacement
Type Designator: 2SC3502F
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 5 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 1.2 pF
Forward Current Transfer Ratio (hFE), MIN: 160
Package: TO126
2SC3502F Substitution
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2SC3502F datasheet
Ordering number EN1425C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1380/2SC3502 Ultrahigh-Definition CRT Display, Video Output Applications Features Package Dimensions High breakdown voltage VCEO 200V. unit mm Small reverse transfer capacitance and excellent 2009B high-frequnecy characteristics [2SA1380/2SC3502] Cre=1.2pF (NPN), 1.7pF (PNP), VCB=30V. Adoptio... See More ⇒
2SC3502(3DA3502) NPN /SILICON NPN TRANSISTOR CRT Purpose Ultrahigh-definition CRT display, video output applications. , , Features High breakdown voltage, small reverse transfer capacitance and excellent high frequency characteristic. /Absolute maxim... See More ⇒
isc Silicon NPN Power Transistor 2SC3502 DESCRIPTION Collector Emitter Breakdown Voltage V = 200 V (BR)CEO Complement to Type 2SA1380 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for ultrahigh-definition CRT display, video out- put applicaitons ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT... See More ⇒
Detailed specifications: 2SC35, 2SC350, 2SC3500, 2SC3501, 2SC3502, 2SC3502C, 2SC3502D, 2SC3502E, TIP41, 2SC3503, 2SC3503C, 2SC3503D, 2SC3503E, 2SC3503F, 2SC3504, 2SC3504D, 2SC3504E
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