2SC3503E Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC3503E
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 7 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 1.8 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO126
2SC3503E Transistor Equivalent Substitute - Cross-Reference Search
2SC3503E Datasheet (PDF)
2sa1381 2sc3503.pdf
Ordering number:EN1426BPNP/NPN Epitaxial Planar Silicon Transistors2SA1381/2SC3503High-Definition CRT Display,Video Output ApplicationsFeatures Package Dimensions High breakdown voltage : VCEO 300V.unit:mm Small reverse transfer capacitance and excellent high2009Afrequency characteristic[2SA1381/2SC3503]: Cre=1.8 pF (NPN), 2.3pF (PNP), VCB=30V. Adoption of
ksc3503 2sc3503.pdf
March 20082SC3503/KSC3503NPN Epitaxial Silicon TransistorApplications Audio, Voltage Amplifier and Current Source CRT Display, Video Output General Purpose Amplifier Features High Voltage : VCEO= 300V Low Reverse Transfer Capacitance : Cre= 1.8pF at VCB = 30VTO-1261 Excellent Gain Linearity for low THD1. Emitter 2.Collector 3.Base High Frequency:
2sc3503 ksc3503.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
