2N2008 Datasheet. Specs and Replacement
Type Designator: 2N2008 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 175 V
Maximum Collector-Emitter Voltage |Vce|: 110 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 0.3 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 40 MHz
Collector Capacitance (Cc): 15 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO5
2N2008 Substitution
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2N2008 datasheet
GOFORD XM2N200. D Description The XM2N200.uses advanced trench technology and G design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features S Schematic diagram VDSS RDS(ON) ID @ 10V (typ) 190V 356.6m 2A High density cell design for ultra low Rdson Fully characterized avalanche voltage an... See More ⇒
SFP135N200C3,SFB132N200C3 ENG N-MOSFET 200V, 11.3m , 95A Features Product Summary N-channel, normal level VDS 200V Enhanced avalanche ruggedness RDS(on) 11.3m Maximum 175 C junction temperature ID 95A 100% DVDS Tested Applications 100% Avalanche Tested DC/DC and AC/DC converters Brushed and BLDC Motor drive systems Battery powered systems SFP135N2... See More ⇒
SFW132N200I3 N-MOSFET 200V, 10.4m , 95A Features Product Summary N-channel, normal level V 200V DS Enhanced avalanche ruggedness R 10.4m DS(on) Maximum 175 C junction temperature I 95A D 100% DVDS Tested Application 100% Avalanche Tested Brushed and BLDC Motor drive systems Battery Management DC/DC and AC/DC Converter SFW132N200I3 Package ... See More ⇒
Detailed specifications: 2N2000, 2N2001, 2N2002, 2N2003, 2N2004, 2N2005, 2N2006, 2N2007, 2SD669, 2N201, 2N2015, 2N2016, 2N2017, 2N2018, 2N2019, 2N2020, 2N2021
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