2N2008 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N2008
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 175 V
Maximum Collector-Emitter Voltage |Vce|: 110 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 0.3 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 40 MHz
Collector Capacitance (Cc): 15 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO5
2N2008 Transistor Equivalent Substitute - Cross-Reference Search
2N2008 Datasheet (PDF)
xm2n200.pdf
GOFORDXM2N200.DDescription The XM2N200.uses advanced trench technology and Gdesign to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features SSchematic diagram VDSS RDS(ON) ID @10V (typ) 190V 356.6m 2A High density cell design for ultra low Rdson Fully characterized avalanche voltage an
sfp135n200c3 sfb132n200c3.pdf
SFP135N200C3,SFB132N200C3ENGN-MOSFET 200V, 11.3m, 95AFeatures Product Summary N-channel, normal levelVDS 200V Enhanced avalanche ruggednessRDS(on) 11.3m Maximum 175C junction temperatureID 95A100% DVDS TestedApplications100% Avalanche Tested DC/DC and AC/DC converters Brushed and BLDC Motor drive systems Battery powered systemsSFP135N2
sfw132n200i3.pdf
SFW132N200I3 N-MOSFET 200V, 10.4m, 95A Features Product Summary N-channel, normal levelV 200V DS Enhanced avalanche ruggednessR 10.4m DS(on) Maximum 175C junction temperatureI 95A D100% DVDS Tested Application 100% Avalanche Tested Brushed and BLDC Motor drive systems Battery Management DC/DC and AC/DC ConverterSFW132N200I3Package
Datasheet: 2N2000 , 2N2001 , 2N2002 , 2N2003 , 2N2004 , 2N2005 , 2N2006 , 2N2007 , SS8050 , 2N201 , 2N2015 , 2N2016 , 2N2017 , 2N2018 , 2N2019 , 2N2020 , 2N2021 .
