2SC3577 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC3577
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage |Vcb|: 1000 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 125 °C
Forward Current Transfer Ratio (hFE), MIN: 45
Noise Figure, dB: -
Package: TO3PF
2SC3577 Transistor Equivalent Substitute - Cross-Reference Search
2SC3577 Datasheet (PDF)
2sc3577.pdf
isc Silicon NPN Power Transistor 2SC3577DESCRIPTIONHigh Collector-Base Breakdown Voltage-: V = 850V(Min)(BR)CBOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and high voltageswitching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV C
2sc3576.pdf
Ordering number:EN1799DNPN Epitaxial Planar Silicon Transistor2SC3576High hFE, Low-FrequencyGeneral-Purpose Amplifier ApplicationsApplications Package Dimensions LF general-purpose amplifiers, various drivers,unit:mmmuting circuit.2033[2SC3576]Features Adoption of FBET process. High DC current gain (hFE=800 to 3200). Low collector-to-emitter saturation vo
2sc3570.pdf
DATA SHEETSILICON POWER TRANSISTOR2SC3570NPN SILICON TRIPLE DIFFUSED TRANSISTORFOR HIGH-VOLTAGE HIGH-SPEED SWITCHINGThe 2SC3570 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT: mm)voltage high-speed switching, and is ideal for use in drivers such asswitching regulators, DC/DC converters, and high-frequency poweramplifiers.FEATURES Mold package that do
2sc3571.pdf
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3571 DESCRIPTION With TO-220Fa package Low collector saturation voltage High switching speed APPLICATIONS Switching regulator DC-DC converter High frequency power amplifier PINNING PIN DESCRIPTION1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol3 Emitter Ab
2sc3570.pdf
isc Silicon NPN Power Transistor 2SC3570DESCRIPTIONCollector-Emitter Sustaining Voltage: V = 400V(Min.)CEO(SUS)Low Collector Saturation VoltageFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator, DC-DC converter andhigh frequency power amplifier applications.ABSOLUTE M
2sc3571.pdf
isc Silicon NPN Power Transistor 2SC3571DESCRIPTIONCollector-Emitter Sustaining Voltage: V = 400V(Min.)CEO(SUS)Low Collector Saturation VoltageFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator, DC-DC converter andhigh frequency power amplifier applications.ABSOLUTE M
Datasheet: 2SC3569 , 2SC3570 , 2SC3571 , 2SC3572 , 2SC3573 , 2SC3574 , 2SC3575 , 2SC3576 , D882 , 2SC3578 , 2SC3579 , 2SC3580 , 2SC3581 , 2SC3582 , 2SC3583 , 2SC3584 , 2SC3585 .
History: DTB113ZCA | DMC5610N | FMMT489
History: DTB113ZCA | DMC5610N | FMMT489
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