2SC3583 Datasheet, Equivalent, Cross Reference Search

NEC's NPN SILICON HIGH NE681FREQUENCY TRANSISTOR SERIESFEATURES HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz LOW NOISE FIGURE:1.2 dB at 1 GHz1.6 dB at 2 GHz HIGH ASSOCIATED GAIN:15 dB at 1 GHz12 dB at 2 GHz LOW COST00 (CHIP) 35 (MICRO-X)DESCRIPTIONNEC's NE681 series of NPN epitaxial silicon transistors aredesigned for low noise, high gain, low cost amplifier a

DATA SHEETDATA SHEETSILICON TRANSISTOR2SC3583MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTORDESCRIPTIONThe 2SC3583 is an NPN epitaxial silicon transistor designed for use in PACKAGE DIMENSIONS(Units: mm)low-noise and small signal amplifiers from VHF band to UHF band. Low-noise figure, high gain, and high current capability achieve a very wide2.80.2dynamic

SMD Type TransistorsNPN Transistors2SC3583SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=65mA1 2 Collector Emitter Voltage VCEO=10V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Colle

isc Silicon NPN RF Transistor 2SC3583DESCRIPTIONLow Noise and High GainNF = 1.2 dB TYP., G = 11 dB TYP.a@V = 8 V, I = 7 mA, f = 1.0 GHzCE CHigh Power GainMAG = 15dB TYP.@V = 8V, I = 20 mA, f = 1.0 GHzCE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low noise amplifier at VHF, UHF and CATVband.AB

DATA SHEETSILICON TRANSISTOR2SC3587NPN EPITAXIAL SILICON TRANSISTORFOR MICROWAVE LOW-NOISE AMPLIFICATIONThe 2SC3587 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS (in mm)noise amplification at 0.5 to 6.0 GHz. This transistor has low-noiseand high-gain characteristics in a wide collector current region, and Ehas a wide dynamic range.FEATURES3.8 MIN. 3.8 M

DATA SHEETDATA SHEETSILICON TRANSISTOR2SC3585MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISORDESCRIPTIONPACKAGE DIMENSIONSThe 2SC3585 is an NPN epitaxial silicon transistor designed for use in(Units: mm)low-noise and small signal amplifiers from VHF band to UHF band. The2SC3585 features excellent power gain with very low-noise figures. The2.80.22SC3585 em

NEC's NPN SILICON HIGH NE680FREQUENCY TRANSISTOR SERIESFEATURES HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz LOW NOISE FIGURE:1.7 dB at 2 GHz2.6 dB at 4 GHz HIGH ASSOCIATED GAIN:12.5 dB at 2 GHz8.0 dB at 4 GHz EXCELLENT LOW VOLTAGE00 (CHIP) 35 (MICRO-X)LOW CURRENT PERFORMANCEDESCRIPTIONNEC's NE680 series of NPN epitaxial silicon transistors isdesigned for l

DATA SHEETDATA SHEETSILICON TRANSISTOR2SC3582MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTORDESCRIPTIONThe 2SC3582 is an NPN epitaxial silicon transistor designed for use inPACKAFE DIMENSIONSin millimeters (inches)low-noise and small signal amplifiers from VHF band to UHF band. Low-5.2 MAX.noise figure, high gain, and high current capability achieve a very

SMD Type TransistorsNPN Transistors2SC3585SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=35mA1 2 Collector Emitter Voltage VCEO=10V+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collect

SMD Type TransistorsNPN Silicon Triple Diffused Transistor2SC3588-ZTO-252Unit: mm+0.15 +0.16.50-0.15 2.30-0.1+0.2 +0.85.30-0.2 0.50-0.7FeaturesHigh voltage VCEO=400V0.127+0.1 max0.80-0.1+0.12.3 0.60-0.11 Base+0.154.60-0.152 Collector3 EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector to base voltage VCBO 500 VCollector t

2SC3585NPN2SC3585 NPN SOT-23-3L VHFUHF CATV :S21e2 5.5dB @ VCE=6VIC=

isc Silicon NPN RF Transistor 2SC3585DESCRIPTIONCollector Current I = 35mACCollector-Emitter Breakdown Voltage-: V = 10V(Min)(BR)CEOHigh gain:2 S21e = 5.5 dB (typical) ( I =5mA,f=2GHz)CGain bandwidth productfT = 10 GHZ (typical) (I =10mA,f=1GH)CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesign

isc Silicon NPN Power Transistor 2SC3588DESCRIPTIONLow Collector Saturation Voltage-V = 0.5V(Max)@ I = 300mACE(sat) CHigh Collector-Emitter Breakdown Voltage-V = 400V(Min)(BR)CEOComplement to Type 2SA1400Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high Voltage switching applicationsABSOLUTE MAXIMUM

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC3582DESCRIPTIONLow Noise Figure, High Gain, and High Current CapabilityAchieve a Very Wide Dynamic Range and Excellent Linearity.Low Noise and High GainNF = 1.2 dB TYP. @f = 1.0 GHzGa = 12 dB TYP. @f = 1.0 GHzMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned f

isc Silicon NPN Power Transistor 2SC3588-ZDESCRIPTIONLow Collector Saturation Voltage-V = 0.5V(Max)@ I = 300mACE(sat) CHigh Collector-Emitter Breakdown Voltage-V = 400V(Min)(BR)CEOComplement to Type 2SA1400-ZMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high Voltage switching applicationsABSOLUTE MAX