2SC3606 Specs and Replacement
Type Designator: 2SC3606
SMD Transistor Code: MH
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Collector Current |Ic max|: 0.08 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 7000 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO236
- BJT ⓘ Cross-Reference Search
2SC3606 datasheet
..1. Size:463K toshiba
2sc3606.pdf 
2SC3606 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3606 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S 2 = 11dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V C... See More ⇒
..2. Size:1704K kexin
2sc3606.pdf
SMD Type Transistors NPN Transistors 2SC3606 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=80mA 1 2 Collector Emitter Voltage VCEO=12V +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collect... See More ⇒
8.1. Size:485K toshiba
2sc3605.pdf
2SC3605 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC3605 VHF UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm FEATURES Low Noise Figure, High Gain NF = 1.1dB, S 2 = 10dB (f = 1GHz) 21e MAXIMUM RATINGS (Ta = 25 C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage VCEO 12 V Emitter-Base Voltage VEBO 3 V Col... See More ⇒
8.2. Size:468K toshiba
2sc3607.pdf
2SC3607 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3607 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S 2 = 9.5dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V ... See More ⇒
8.3. Size:108K sanyo
2sa1407 2sc3601.pdf
Ordering number EN1766C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1407/2SC3601 Ultrahigh-Definition CRT Display Video Output Applications Applications Package Dimensions Ultrahigh-definition CRT display. unit mm Video output. 2009B Color TV chroma output. [2SA1407/2SC3601] Wide-band amp. Features High fT fT typ=400MHz. High breakdown voltage VCEO... See More ⇒
8.4. Size:136K sanyo
2sa1406 2sc3600.pdf
Ordering number EN1765A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1406/2SC3600 Ultrahigh-Definition CRT Display Video Output Applications Applications Package Dimensions Ultrahigh-definition CRT display. unit mm Video output. 2009A Color TV chroma output. [2SA1406/2SC3600] Wide-band amp. Features High fT fT typ=400MHz. High breakdown voltage VCEO... See More ⇒
8.5. Size:257K nec
ne856 2sc5011 2sc5006 2sc4226 2sc3355 2sc3603 2sc3356 2sc3357 2sc3603 2sc4093.pdf
NEC's NPN SILICON HIGH NE856 FREQUENCY TRANSISTOR SERIES FEATURES HIGH GAIN BANDWIDTH PRODUCT fT = 7 GHz LOW NOISE FIGURE 1.1 dB at 1 GHz HIGH COLLECTOR CURRENT 100 mA HIGH RELIABILITY METALLIZATION 35 (MICRO-X) 00 (CHIP) LOW COST DESCRIPTION NEC's NE856 series of NPN epitaxial silicon transistors is designed for low cost amplifier and oscillator application... See More ⇒
8.6. Size:89K nec
2sc3603.pdf
DATA SHEET SILICON TRANSISTOR 2SC3603 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3603 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS (in mm) noise amplification at 0.5 to 4.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and E has a wide dynamic range. FEATURES 3.8 MIN. 3.8 M... See More ⇒
8.7. Size:94K nec
2sc3604.pdf
DATA SHEET SILICON TRANSISTOR 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3604 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS (in mm) noise amplification at 1.0 to 6.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and E has a wide dynamic range. FEATURES 3.8 MIN. 3.8 M... See More ⇒
8.8. Size:218K nec
2sc5012 2sc5007 2sc4227 2sc3583 2sc3604 2sc4094 ne681.pdf
NEC's NPN SILICON HIGH NE681 FREQUENCY TRANSISTOR SERIES FEATURES HIGH GAIN BANDWIDTH PRODUCT fT = 8 GHz LOW NOISE FIGURE 1.2 dB at 1 GHz 1.6 dB at 2 GHz HIGH ASSOCIATED GAIN 15 dB at 1 GHz 12 dB at 2 GHz LOW COST 00 (CHIP) 35 (MICRO-X) DESCRIPTION NEC's NE681 series of NPN epitaxial silicon transistors are designed for low noise, high gain, low cost amplifier a... See More ⇒
8.10. Size:1604K kexin
2sc3607.pdf
SMD Type Transistors NPN Transistors 2SC3607 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=80mA Collector Emitter Voltage VCEO=12V Marking MH 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 12 V Emitter... See More ⇒
Detailed specifications: 2SC3601C, 2SC3601D, 2SC3601E, 2SC3601F, 2SC3602, 2SC3603, 2SC3604, 2SC3605, D880, 2SC3607, 2SC3608, 2SC3609, 2SC361, 2SC3610, 2SC3611, 2SC3612, 2SC3613
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