All Transistors. 2SC3610 Datasheet

 

2SC3610 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SC3610
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 110 V
   Maximum Collector Current |Ic max|: 0.15 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 300 MHz
   Forward Current Transfer Ratio (hFE), MIN: 90
   Noise Figure, dB: -
   Package: TO220

 2SC3610 Transistor Equivalent Substitute - Cross-Reference Search

   

2SC3610 Datasheet (PDF)

 8.1. Size:213K  toshiba
2sc3619.pdf

2SC3610
2SC3610

 8.2. Size:241K  toshiba
2sc3613.pdf

2SC3610
2SC3610

 8.3. Size:168K  nec
2sc3616.pdf

2SC3610
2SC3610

 8.4. Size:164K  nec
2sc3615.pdf

2SC3610
2SC3610

 8.5. Size:228K  nec
2sc3618.pdf

2SC3610
2SC3610

 8.6. Size:225K  nec
2sc3617.pdf

2SC3610
2SC3610

 8.7. Size:70K  panasonic
2sc3611.pdf

2SC3610
2SC3610

Power Transistors2SC3611Silicon NPN epitaxial planar typeUnit: mmFor video amplifier8.0+0.50.13.20.2 3.160.1 Features High transition frequency fT Small collector output capacitance Cob Wide current range TO-126B package which requires no insulation plate for installa-tion to the heat sink Absolute Maximum Ratings TC = 25C0.750.10.50.

 8.8. Size:1258K  kexin
2sc3618.pdf

2SC3610
2SC3610

SMD Type TransistorsNPN Transistors2SC3618SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=0.7A Collector Emitter Voltage VCEO=25V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VE

 8.9. Size:1269K  kexin
2sc3617.pdf

2SC3610
2SC3610

SMD Type TransistorsNPN Transistors2SC3617SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=0.3A Collector Emitter Voltage VCEO=50V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VE

 8.10. Size:191K  inchange semiconductor
2sc3619.pdf

2SC3610
2SC3610

isc Silicon NPN Power Transistor 2SC3619DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh voltage switching and amplifier applications.Color TV horizontal driver applications.Color TV chroma output applications.ABSOL

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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