2SC3612 Datasheet and Replacement

   Type Designator: 2SC3612
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 20 W
   Maximum Collector-Base Voltage |Vcb|: 180 V
   Maximum Collector-Emitter Voltage |Vce|: 150 V
   Maximum Collector Current |Ic max|: 0.3 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 400 MHz
   Collector Capacitance (Cc): 4 pF
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO220

2SC3612 Substitution

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2SC3612 Datasheet (PDF)

8.1. Size:213K toshiba
2sc3619.pdf pdf_icon

8.2. Size:241K toshiba
2sc3613.pdf pdf_icon

8.3. Size:168K nec
2sc3616.pdf pdf_icon

8.4. Size:164K nec
2sc3615.pdf pdf_icon

8.5. Size:228K nec
2sc3618.pdf pdf_icon

8.6. Size:225K nec
2sc3617.pdf pdf_icon

8.7. Size:70K panasonic
2sc3611.pdf pdf_icon

Power Transistors2SC3611Silicon NPN epitaxial planar typeUnit: mmFor video amplifier8.0+0.50.13.20.2 3.160.1 Features High transition frequency fT Small collector output capacitance Cob Wide current range TO-126B package which requires no insulation plate for installa-tion to the heat sink Absolute Maximum Ratings TC = 25C0.750.10.50.

8.8. Size:1258K kexin
2sc3618.pdf pdf_icon

SMD Type TransistorsNPN Transistors2SC3618SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=0.7A Collector Emitter Voltage VCEO=25V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VE

8.9. Size:1269K kexin
2sc3617.pdf pdf_icon

SMD Type TransistorsNPN Transistors2SC3617SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=0.3A Collector Emitter Voltage VCEO=50V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VE

8.10. Size:191K inchange semiconductor
2sc3619.pdf pdf_icon

isc Silicon NPN Power Transistor 2SC3619DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh voltage switching and amplifier applications.Color TV horizontal driver applications.Color TV chroma output applications.ABSOL

Datasheet: 2SC3605 , 2SC3606 , 2SC3607 , 2SC3608 , 2SC3609 , 2SC361 , 2SC3610 , 2SC3611 , NJW0281G , 2SC3613 , 2SC3614 , 2SC3615 , 2SC3616 , 2SC3617 , 2SC3618 , 2SC3619 , 2SC362 .