2SC371 Datasheet and Replacement
Type Designator: 2SC371
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.2
W
Maximum Collector-Base Voltage |Vcb|: 35
V
Maximum Collector-Emitter Voltage |Vce|: 30
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 125
°C
Transition Frequency (ft): 80
MHz
Collector Capacitance (Cc): 3.5
pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package:
TO92
-
BJT ⓘ Cross-Reference Search
2SC371 Datasheet (PDF)
0.3. Size:30K jmnic
2sc3710.pdf 

Power Transistors www.jmnic.com 2SC3710 Silicon NPN Transistors Features B C E With TO-220Fa package Complement to type 2SA1452 Hihg current switching applications Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNITVCBO Collector to base voltage 80 V VCEO Collector to emitter voltage 80 V VEBO Emitter to base voltage 6 V IB Base current 2 A IC Colle
0.5. Size:177K cn sptech
2sc3710o 2sc3710y.pdf 

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC3710DESCRIPTIONLow Collector Saturation Voltage-: V = 0.4V(Max)@I = 6ACE(sat) CGood Linearity of hFEHigh Switching SpeedComplement to Type 2SA1452APPLICATIONSDesigned for high current switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Volta
0.6. Size:210K inchange semiconductor
2sc3719.pdf 

isc Silicon NPN Power Transistor 2SC3719DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V (Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching and horizontal deflectionoutput applications.ABSOLUTE MAXIMUM RATINGS(T =2
0.7. Size:202K inchange semiconductor
2sc3710.pdf 

isc Silicon NPN Power Transistor 2SC3710DESCRIPTIONLow Collector Saturation Voltage-: V = 0.4V(Max)@I = 6ACE(sat) CGood Linearity of hFEHigh Switching SpeedComplement to Type 2SA1452Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)
0.8. Size:197K inchange semiconductor
2sc3710a.pdf 

isc Silicon NPN Power Transistor 2SC3710ADESCRIPTIONLow Collector Saturation Voltage-: V = 0.4V(Max)@I = 6ACE(sat) CGood Linearity of hFEComplement to Type 2SA1452AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA
0.9. Size:196K inchange semiconductor
2sc3714.pdf 

isc Silicon NPN Power Transistor 2SC3714DESCRIPTIONHigh Switching SpeedHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 500 VCBOV Collector-Emitter Voltage 400 VCEOV Emitter-Base
Datasheet: 2SC3708S
, 2SC3708T
, 2SC3708U
, 2SC3709
, 2SC3709O
, 2SC3709Y
, 2SC370G
, 2SC370-T
, A940
, 2SC3710
, 2SC3710O
, 2SC3710Y
, 2SC3711
, 2SC3712
, 2SC3713
, 2SC3714
, 2SC3715
.
Keywords - 2SC371 transistor datasheet
2SC371 cross reference
2SC371 equivalent finder
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2SC371 replacement