All Transistors. 2SC3718 Datasheet

 

2SC3718 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SC3718
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 750 MHz
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: TO236

 2SC3718 Transistor Equivalent Substitute - Cross-Reference Search

   

2SC3718 Datasheet (PDF)

 8.1. Size:213K  toshiba
2sc3710.pdf

2SC3718 2SC3718

 8.2. Size:224K  toshiba
2sc3710a.pdf

2SC3718 2SC3718

 8.3. Size:30K  jmnic
2sc3710.pdf

2SC3718

Power Transistors www.jmnic.com 2SC3710 Silicon NPN Transistors Features B C E With TO-220Fa package Complement to type 2SA1452 Hihg current switching applications Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNITVCBO Collector to base voltage 80 V VCEO Collector to emitter voltage 80 V VEBO Emitter to base voltage 6 V IB Base current 2 A IC Colle

 8.4. Size:601K  shindengen
2sc3714.pdf

2SC3718

 8.5. Size:177K  cn sptech
2sc3710o 2sc3710y.pdf

2SC3718 2SC3718

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC3710DESCRIPTIONLow Collector Saturation Voltage-: V = 0.4V(Max)@I = 6ACE(sat) CGood Linearity of hFEHigh Switching SpeedComplement to Type 2SA1452APPLICATIONSDesigned for high current switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Volta

 8.6. Size:210K  inchange semiconductor
2sc3719.pdf

2SC3718 2SC3718

isc Silicon NPN Power Transistor 2SC3719DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V (Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching and horizontal deflectionoutput applications.ABSOLUTE MAXIMUM RATINGS(T =2

 8.7. Size:202K  inchange semiconductor
2sc3710.pdf

2SC3718 2SC3718

isc Silicon NPN Power Transistor 2SC3710DESCRIPTIONLow Collector Saturation Voltage-: V = 0.4V(Max)@I = 6ACE(sat) CGood Linearity of hFEHigh Switching SpeedComplement to Type 2SA1452Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)

 8.8. Size:197K  inchange semiconductor
2sc3710a.pdf

2SC3718 2SC3718

isc Silicon NPN Power Transistor 2SC3710ADESCRIPTIONLow Collector Saturation Voltage-: V = 0.4V(Max)@I = 6ACE(sat) CGood Linearity of hFEComplement to Type 2SA1452AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA

 8.9. Size:196K  inchange semiconductor
2sc3714.pdf

2SC3718 2SC3718

isc Silicon NPN Power Transistor 2SC3714DESCRIPTIONHigh Switching SpeedHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 500 VCBOV Collector-Emitter Voltage 400 VCEOV Emitter-Base

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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