2SC3719 Specs and Replacement
Type Designator: 2SC3719
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 1200 V
Maximum Collector-Emitter Voltage |Vce|: 800 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO3
2SC3719 Substitution
- BJT ⓘ Cross-Reference Search
2SC3719 datasheet
isc Silicon NPN Power Transistor 2SC3719 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V (Min) (BR)CEO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching and horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =2... See More ⇒
Power Transistors www.jmnic.com 2SC3710 Silicon NPN Transistors Features B C E With TO-220Fa package Complement to type 2SA1452 Hihg current switching applications Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 80 V VCEO Collector to emitter voltage 80 V VEBO Emitter to base voltage 6 V IB Base current 2 A IC Colle... See More ⇒
Detailed specifications: 2SC3711, 2SC3712, 2SC3713, 2SC3714, 2SC3715, 2SC3716, 2SC3717, 2SC3718, BC558, 2SC371G, 2SC371GO, 2SC371GR, 2SC371O, 2SC371R, 2SC371-T, 2SC372, 2SC3720
Keywords - 2SC3719 pdf specs
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History: CDD2395 | BFQ18
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