2SC371GR Specs and Replacement
Type Designator: 2SC371GR
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 80 MHz
Collector Capacitance (Cc): 3.5 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO92
- BJT ⓘ Cross-Reference Search
2SC371GR datasheet
8.3. Size:30K jmnic
2sc3710.pdf 
Power Transistors www.jmnic.com 2SC3710 Silicon NPN Transistors Features B C E With TO-220Fa package Complement to type 2SA1452 Hihg current switching applications Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 80 V VCEO Collector to emitter voltage 80 V VEBO Emitter to base voltage 6 V IB Base current 2 A IC Colle... See More ⇒
8.5. Size:177K cn sptech
2sc3710o 2sc3710y.pdf
SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC3710 DESCRIPTION Low Collector Saturation Voltage- V = 0.4V(Max)@I = 6A CE(sat) C Good Linearity of h FE High Switching Speed Complement to Type 2SA1452 APPLICATIONS Designed for high current switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Volta... See More ⇒
8.6. Size:210K inchange semiconductor
2sc3719.pdf
isc Silicon NPN Power Transistor 2SC3719 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V (Min) (BR)CEO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching and horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =2... See More ⇒
8.7. Size:202K inchange semiconductor
2sc3710.pdf
isc Silicon NPN Power Transistor 2SC3710 DESCRIPTION Low Collector Saturation Voltage- V = 0.4V(Max)@I = 6A CE(sat) C Good Linearity of h FE High Switching Speed Complement to Type 2SA1452 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) ... See More ⇒
8.8. Size:197K inchange semiconductor
2sc3710a.pdf
isc Silicon NPN Power Transistor 2SC3710A DESCRIPTION Low Collector Saturation Voltage- V = 0.4V(Max)@I = 6A CE(sat) C Good Linearity of h FE Complement to Type 2SA1452A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VA... See More ⇒
8.9. Size:196K inchange semiconductor
2sc3714.pdf
isc Silicon NPN Power Transistor 2SC3714 DESCRIPTION High Switching Speed High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 500 V CBO V Collector-Emitter Voltage 400 V CEO V Emitter-Base ... See More ⇒
Detailed specifications: 2SC3714, 2SC3715, 2SC3716, 2SC3717, 2SC3718, 2SC3719, 2SC371G, 2SC371GO, 2SD313, 2SC371O, 2SC371R, 2SC371-T, 2SC372, 2SC3720, 2SC3721, 2SC3722, 2SC3722K
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