2SC3722K Datasheet and Replacement

   Type Designator: 2SC3722K
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.8 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 140 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO236

2SC3722K Substitution

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2SC3722K Datasheet (PDF)

7.1. Size:229K rohm
2sc3722.pdf pdf_icon

8.1. Size:46K no
2sc3725.pdf pdf_icon

8.2. Size:46K no
2sc3724.pdf pdf_icon

8.3. Size:70K isahaya
2sc3728.pdf pdf_icon

ISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to persona

8.4. Size:416K jmnic
2sc3720.pdf pdf_icon

Product Specification Silicon NPN Power Transistor 2SC3720 DESCRIPTION High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V (Min) High Switching Speed Wide Area of Safe Operation APPLICATIONS Designed for high speed switching and horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER MAX UNITVCBO Collector-Base Volt

8.5. Size:151K jmnic
2sc3725.pdf pdf_icon

JMnic Product Specification Silicon NPN Power Transistors 2SC3725 DESCRIPTION With TO-3PN package High voltage ,high speed switching High reliability APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1

8.6. Size:242K jmnic
2sc3723.pdf pdf_icon

JMnic Product Specification Silicon NPN Power Transistors 2SC3723 DESCRIPTION With TO-220C package High voltage ,high speed switching High reliability APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAb

8.7. Size:196K inchange semiconductor
2sc3729.pdf pdf_icon

isc Silicon NPN Power Transistor 2SC3729DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V(Min)(BR)CEOWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collect

8.8. Size:207K inchange semiconductor
2sc3720.pdf pdf_icon

isc Silicon NPN Power Transistor 2SC3720DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V (Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching and horizontal deflectionoutput applications.ABSOLUTE MAXIMUM RATINGS(T =2

8.9. Size:198K inchange semiconductor
2sc3725.pdf pdf_icon

isc Silicon NPN Power Transistor 2SC3725DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXI

8.10. Size:195K inchange semiconductor
2sc3723.pdf pdf_icon

isc Silicon NPN Power Transistor 2SC3723DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXI

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .