2SC3731 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC3731
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 125 °C
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO126
2SC3731 Transistor Equivalent Substitute - Cross-Reference Search
2SC3731 Datasheet (PDF)
2sc3736.pdf
DATA SHEETSILICON TRANSISTOR2SC3736HIGH SPEED SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SC3736 is designed for power amplifier and high speed 4.5 0.1switching applications. 1.6 0.2 1.5 0.1FEATURES High speed, high voltage switching Low collector saturation voltage 2 Complementary to the
2sc3735.pdf
SMD Type TransistorsNPN Transistors2SC3735SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features Collector Current Capability IC=200mA Collector Emitter Voltage VCEO=15V 1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collec
2sc3736.pdf
SMD Type TransistorsNPN Transistors2SC37361.70 0.1 Features High Speed,High Voltage Switching Low Collector Saturation Voltage Complementary to 2SA14630.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 80 Collector - Emitter Voltage VCEO 45 V Emitter - Base V
2sc3734.pdf
SMD Type TransistorsNPN Transistors2SC3734SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features High Speed: tstg
2sc3739.pdf
SMD Type TransistorsNPN Transistors2SC3739SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features High Gain Bandwidth Product:fT=200MHz(min) Complementary to 2SA14641 2+0.1+0.050.95 -0.1 0.1-0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector
2sc3738.pdf
isc Silicon NPN Power Transistor 2SC3738DESCRIPTIONHigh Voltage, High Speed SwitchingWide Area of Safe OperationGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching and horizontal deflectionoutput applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU
2sc3737.pdf
isc Silicon NPN Power Transistor 2SC3737DESCRIPTIONHigh Collector-Base Breakdown Voltage-: V = 800V(Min)(BR)CBOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching and horizontal deflectionoutput applications.ABSOLUTE MAXIMUM RATINGS(T =25
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
