2SC3737 Specs and Replacement

Type Designator: 2SC3737

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 125 W

Maximum Collector-Base Voltage |Vcb|: 1200 V

Maximum Collector-Emitter Voltage |Vce|: 800 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO3PF

 2SC3737 Substitution

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2SC3737 datasheet

 ..1. Size:195K  inchange semiconductor

2sc3737.pdf pdf_icon

2SC3737

isc Silicon NPN Power Transistor 2SC3737 DESCRIPTION High Collector-Base Breakdown Voltage- V = 800V(Min) (BR)CBO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching and horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ... See More ⇒

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2sc3733.pdf pdf_icon

2SC3737

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2sc3735.pdf pdf_icon

2SC3737

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 8.3. Size:161K  nec

2sc3736.pdf pdf_icon

2SC3737

DATA SHEET SILICON TRANSISTOR 2SC3736 HIGH SPEED SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION PACKAGE DRAWING (Unit mm) The 2SC3736 is designed for power amplifier and high speed 4.5 0.1 switching applications. 1.6 0.2 1.5 0.1 FEATURES High speed, high voltage switching Low collector saturation voltage 2 Complementary to the ... See More ⇒

Detailed specifications: 2SC373, 2SC3730, 2SC3731, 2SC3732, 2SC3733, 2SC3734, 2SC3735, 2SC3736, 2SC2383, 2SC3738, 2SC3739, 2SC373G, 2SC374, 2SC3740, 2SC3741, 2SC3742, 2SC3743

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