All Transistors. 2SC3737 Datasheet

 

2SC3737 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SC3737
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 125 W
   Maximum Collector-Base Voltage |Vcb|: 1200 V
   Maximum Collector-Emitter Voltage |Vce|: 800 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO3PF

 2SC3737 Transistor Equivalent Substitute - Cross-Reference Search

   

2SC3737 Datasheet (PDF)

 ..1. Size:195K  inchange semiconductor
2sc3737.pdf

2SC3737
2SC3737

isc Silicon NPN Power Transistor 2SC3737DESCRIPTIONHigh Collector-Base Breakdown Voltage-: V = 800V(Min)(BR)CBOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching and horizontal deflectionoutput applications.ABSOLUTE MAXIMUM RATINGS(T =25

 8.1. Size:173K  1
2sc3733.pdf

2SC3737
2SC3737

 8.2. Size:180K  nec
2sc3735.pdf

2SC3737
2SC3737

 8.3. Size:161K  nec
2sc3736.pdf

2SC3737
2SC3737

DATA SHEETSILICON TRANSISTOR2SC3736HIGH SPEED SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SC3736 is designed for power amplifier and high speed 4.5 0.1switching applications. 1.6 0.2 1.5 0.1FEATURES High speed, high voltage switching Low collector saturation voltage 2 Complementary to the

 8.4. Size:193K  nec
2sc3731.pdf

2SC3737
2SC3737

 8.5. Size:233K  nec
2sc3734.pdf

2SC3737
2SC3737

 8.6. Size:240K  nec
2sc3739.pdf

2SC3737
2SC3737

 8.7. Size:161K  nec
2sc3732.pdf

2SC3737
2SC3737

 8.8. Size:1125K  kexin
2sc3735.pdf

2SC3737
2SC3737

SMD Type TransistorsNPN Transistors2SC3735SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features Collector Current Capability IC=200mA Collector Emitter Voltage VCEO=15V 1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collec

 8.9. Size:1341K  kexin
2sc3736.pdf

2SC3737
2SC3737

SMD Type TransistorsNPN Transistors2SC37361.70 0.1 Features High Speed,High Voltage Switching Low Collector Saturation Voltage Complementary to 2SA14630.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 80 Collector - Emitter Voltage VCEO 45 V Emitter - Base V

 8.10. Size:1621K  kexin
2sc3734.pdf

2SC3737
2SC3737

SMD Type TransistorsNPN Transistors2SC3734SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features High Speed: tstg

 8.11. Size:2345K  kexin
2sc3739.pdf

2SC3737
2SC3737

SMD Type TransistorsNPN Transistors2SC3739SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features High Gain Bandwidth Product:fT=200MHz(min) Complementary to 2SA14641 2+0.1+0.050.95 -0.1 0.1-0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector

 8.12. Size:197K  inchange semiconductor
2sc3738.pdf

2SC3737
2SC3737

isc Silicon NPN Power Transistor 2SC3738DESCRIPTIONHigh Voltage, High Speed SwitchingWide Area of Safe OperationGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching and horizontal deflectionoutput applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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