2SC3737 Specs and Replacement
Type Designator: 2SC3737
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 125 W
Maximum Collector-Base Voltage |Vcb|: 1200 V
Maximum Collector-Emitter Voltage |Vce|: 800 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO3PF
2SC3737 Substitution
- BJT ⓘ Cross-Reference Search
2SC3737 datasheet
isc Silicon NPN Power Transistor 2SC3737 DESCRIPTION High Collector-Base Breakdown Voltage- V = 800V(Min) (BR)CBO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching and horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ... See More ⇒
DATA SHEET SILICON TRANSISTOR 2SC3736 HIGH SPEED SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION PACKAGE DRAWING (Unit mm) The 2SC3736 is designed for power amplifier and high speed 4.5 0.1 switching applications. 1.6 0.2 1.5 0.1 FEATURES High speed, high voltage switching Low collector saturation voltage 2 Complementary to the ... See More ⇒
Detailed specifications: 2SC373, 2SC3730, 2SC3731, 2SC3732, 2SC3733, 2SC3734, 2SC3735, 2SC3736, 2SC2383, 2SC3738, 2SC3739, 2SC373G, 2SC374, 2SC3740, 2SC3741, 2SC3742, 2SC3743
Keywords - 2SC3737 pdf specs
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