2SC3738 Specs and Replacement
Type Designator: 2SC3738
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 175 W
Maximum Collector-Base Voltage |Vcb|: 1200 V
Maximum Collector-Emitter Voltage |Vce|: 800 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO3PL
2SC3738 Substitution
- BJT ⓘ Cross-Reference Search
2SC3738 datasheet
isc Silicon NPN Power Transistor 2SC3738 DESCRIPTION High Voltage, High Speed Switching Wide Area of Safe Operation Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching and horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU... See More ⇒
DATA SHEET SILICON TRANSISTOR 2SC3736 HIGH SPEED SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION PACKAGE DRAWING (Unit mm) The 2SC3736 is designed for power amplifier and high speed 4.5 0.1 switching applications. 1.6 0.2 1.5 0.1 FEATURES High speed, high voltage switching Low collector saturation voltage 2 Complementary to the ... See More ⇒
Detailed specifications: 2SC3730, 2SC3731, 2SC3732, 2SC3733, 2SC3734, 2SC3735, 2SC3736, 2SC3737, BC547B, 2SC3739, 2SC373G, 2SC374, 2SC3740, 2SC3741, 2SC3742, 2SC3743, 2SC3744
Keywords - 2SC3738 pdf specs
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