All Transistors. 2SC3738 Datasheet

 

2SC3738 Datasheet and Replacement


   Type Designator: 2SC3738
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 175 W
   Maximum Collector-Base Voltage |Vcb|: 1200 V
   Maximum Collector-Emitter Voltage |Vce|: 800 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO3PL
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2SC3738 Datasheet (PDF)

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2SC3738

isc Silicon NPN Power Transistor 2SC3738DESCRIPTIONHigh Voltage, High Speed SwitchingWide Area of Safe OperationGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching and horizontal deflectionoutput applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU

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2SC3738

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2SC3738

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2SC3738

DATA SHEETSILICON TRANSISTOR2SC3736HIGH SPEED SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SC3736 is designed for power amplifier and high speed 4.5 0.1switching applications. 1.6 0.2 1.5 0.1FEATURES High speed, high voltage switching Low collector saturation voltage 2 Complementary to the

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

Keywords - 2SC3738 transistor datasheet

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