2SC3748Q Specs and Replacement
Type Designator: 2SC3748Q
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: TO220F
- BJT ⓘ Cross-Reference Search
2SC3748Q datasheet
7.1. Size:94K sanyo
2sa1471 2sc3748.pdf 
Ordering number EN2001A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1471/2SC3748 60V/10A High-Speed Switching Applications Applications Package Dimensions Car-use inductance drivers, lamp drivers. unit mm Inverters drivers, conveters (strobes, flashes, FLT 2041 lighting circuits). [2SA1471/2SC3748] Power amplifiers (high-power car stereos, motor control). High-s... See More ⇒
7.2. Size:211K inchange semiconductor
2sc3748.pdf
isc Silicon NPN Power Transistor 2SC3748 DESCRIPTION Good Linearity of h FE High Switching Speed Low Collector Saturation Voltage Complement to Type 2SA1471 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Inductance, lamp drivers Inverters, converters Power amplifiers High-speed switching applications. ABSOLUTE MAXI... See More ⇒
8.1. Size:100K sanyo
2sc3749.pdf
Ordering number EN1968A NPN Triple Diffused Planar Silicon Transistor 2SC3749 500V/3A Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit mm Fast switching speed. 2041A Wide ASO. [2SC3749] Adoption of MBIT process. Micaless package facilitating mounting. 1 Base 2 Collector 3 Emitter SANYO TO-2... See More ⇒
8.2. Size:95K sanyo
2sa1470 2sc3747.pdf
Ordering number EN1972A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1470/2SC3747 60V/7A High-Speed Switching Applications Applications Package Dimensions Inductance, lamp drivers. unit mm Inveters, conveters (strobes, flashes, FLT lighting 2041 circiuts). [2SA1470/2SC3747] Power amplifiers (high-power car stereos, motor control). High-speed switching (switching ... See More ⇒
8.3. Size:101K sanyo
2sa1469 2sc3746.pdf
Ordering number EN1973A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1469/2SC3746 60V/5A High-Speed Switching Applications Applications Package Dimensions Various inductance lamp drivers for electrical unit mm equipment. 2041 Inverters, converters (strobo, flash, fluorescent lamp [2SA1469/2SC3746] lighting circuit). Power amp (high power car stereo, motor controller).... See More ⇒
8.4. Size:56K panasonic
2sc3743.pdf
Power Transistors 2SC3743 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features High-speed switching 3.1 0.1 Wide area of safe operation (ASO) with high breakdown voltage Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat si... See More ⇒
8.5. Size:190K jmnic
2sc3746.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3746 DESCRIPTION With TO-220F package Complement to type 2SA1469 Low saturation voltage Excellent current dependence of hFE Short switching time APPLICATIONS Various inductance of lamp drivers for electronic equipment Inverters ,converters Switching regulator ,driver PINNING PIN DESCRIPTION ... See More ⇒
8.6. Size:211K inchange semiconductor
2sc3747.pdf
isc Silicon NPN Power Transistor 2SC3747 DESCRIPTION Good Linearity of h FE High Switching Speed Low Collector Saturation Voltage Complement to Type 2SA1470 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Inductance, lamp drivers Inverters, converters Power amplifiers High-speed switching applications. ABSOLUTE MAXI... See More ⇒
8.7. Size:214K inchange semiconductor
2sc3749.pdf
isc Silicon NPN Power Transistor 2SC3749 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 500V(Min) (BR)CEO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V ... See More ⇒
8.8. Size:212K inchange semiconductor
2sc3743.pdf
isc Silicon NPN Power Transistor 2SC3743 DESCRIPTION Collector-Emiiter Breakdown Voltage- V = 800V(Min.) (BR)CEO Wide Area of Safe Operation High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UN... See More ⇒
8.9. Size:204K inchange semiconductor
2sc3746.pdf
isc Silicon NPN Power Transistor 2SC3746 DESCRIPTION Good Linearity of h FE High Switching Speed Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Various inductance lamp drivers for electrical equipment Inverters, converters Power amplifiers High-speed switching applications. ABSOLUTE MA... See More ⇒
Detailed specifications: 2SC3746Q, 2SC3746R, 2SC3746S, 2SC3747, 2SC3747Q, 2SC3747R, 2SC3747S, 2SC3748, 2SC5200, 2SC3748R, 2SC3748S, 2SC3749, 2SC3749L, 2SC3749M, 2SC3749N, 2SC374B, 2SC374V
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