2N2062A Datasheet. Specs and Replacement
Type Designator: 2N2062A 📄📄
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 90 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 100 °C
Electrical Characteristics
Transition Frequency (ft): 0.02 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Package: TO3
2N2062A Substitution
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2N2062A datasheet
2N2060M www.centralsemi.com SILICON DESCRIPTION DUAL NPN TRANSISTOR The CENTRAL SEMICONDUCTOR 2N2060M is a silicon dual NPN transistor utilizing two individual chips mounted in a hermetically sealed metal case designed for differential amplifier applications. MARKING FULL PART NUMBER TO-78 CASE MAXIMUM RATINGS (TA=25 C unless otherwise noted) SYMBOL UNITS Collector-Base Volt... See More ⇒
2N2060ADCSM Dimensions in mm (inches). Dual Bipolar PNP Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.15 2.29 0.20 1.65 0.13 (0.055 0.006) (0.09 0.008) (0.065 0.005) Applications 2 3 1 4 Dual Bipolar PNP Devices. A 0.23 6 5 rad. (0.009) V = 80V CEO 6.22 0.13 A = 1.27 0.13 I = 0.5A C (0.... See More ⇒
TECHNICAL DATA UNITIZED DUAL NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/270 Devices Qualified Level JAN 2N2060 JANTX 2N2060L JANTXV MAXIMUM RATINGS Ratings Symbol 2N2060 Unit Collector-Emitter Voltage 60 Vdc VCEO Collector-Base Voltage 100 Vdc VCBO Emitter-Base Voltage 7.0 Vdc VEBO Collector Current 500 mAdc IC One Both Section Sections Total ... See More ⇒
Detailed specifications: 2N206, 2N2060, 2N2060A, 2N2060B, 2N2060DCSM, 2N2061, 2N2061A, 2N2062, 13007, 2N2063, 2N2063A, 2N2064, 2N2064A, 2N2065, 2N2065A, 2N2066, 2N2066A
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