2SC3758 Datasheet. Specs and Replacement
Type Designator: 2SC3758 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 70 W
Maximum Collector-Base Voltage |Vcb|: 500 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO218
- BJT ⓘ Cross-Reference Search
2SC3758 datasheet
8.1. Size:27K sanyo
2sc3751.pdf 
Ordering number ENN1970B 2SC3751 NPN Triple Diffused Planar Silicon Transistor 2SC3751 800V / 1.5A Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit mm Fast switching speed. 2041A Wide ASO. [2SC3751] Adoption of MBIT process. 4.5 Micaless package facilitating mounting. 10.0 2.8 3.2 2.4 1.6 1... See More ⇒
8.2. Size:100K sanyo
2sc3750.pdf
Ordering number EN1969A NPN Triple Diffused Planar Silicon Transistor 2SC3750 500V/5A Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit mm Fast switching speed. 2041A Wide ASO. [2SC3750] Adoption of MBIT process. Micaless package facilitating mounting. 1 Base 2 Collector 3 Emitter SANYO TO-2... See More ⇒
8.3. Size:102K sanyo
2sc3752.pdf
Ordering number EN1971A NPN Triple Diffused Planar Silicon Transistor 2SC3752 800V/3A Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit mm Fast switching speed. 2041A Wide ASO. [2SC3752] Adoption of MBIT process. Micaless package facilitating mounting. 1 Base 2 Collector 3 Emitter SANYO TO-2... See More ⇒
8.4. Size:64K panasonic
2sc3757.pdf
Transistors 2SC3757 Silicon NPN epitaxial planer type Unit mm 0.40+0.10 For high speed switching 0.05 0.16+0.10 0.06 3 Features High-speed switching 1 2 Low collector to emitter saturation voltage VCE(sat) (0.95) (0.95) Mini type package, allowing downsizing of the equipment and 1.9 0.1 automatic insertion through the tape packing and the magazine 2.90+0.20... See More ⇒
8.5. Size:47K panasonic
2sc3757 e.pdf
Transistor 2SC3757 Silicon NPN epitaxial planer type For high speed switching Unit mm +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features High-speed switching. Low collector to emitter saturation voltage VCE(sat). 1 Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine packing. 2 Allowing pai... See More ⇒
8.6. Size:703K kexin
2sc3757.pdf
SMD Type Transistors NPN Transistors 2SC3757 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=40V 1 2 +0.05 0.95+0.1 -0.1 0.1 -0.01 Complementary to 2SA1738 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector -... See More ⇒
8.7. Size:219K inchange semiconductor
2sc3754.pdf
isc Silicon NPN Power Transistor 2SC3754 DESCRIPTION Wide Area of Safe Operation High Breakdown Voltage- V = 1500V(Min) (BR)CBO High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for regulator applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P... See More ⇒
8.8. Size:214K inchange semiconductor
2sc3751.pdf
isc Silicon NPN Power Transistor 2SC3751 DESCRIPTION High Breakdown Voltage and High Reliability High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Volt... See More ⇒
8.9. Size:211K inchange semiconductor
2sc3750.pdf
isc Silicon NPN Power Transistor 2SC3750 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 500V(Min.) (BR)CEO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V... See More ⇒
8.10. Size:211K inchange semiconductor
2sc3752.pdf
isc Silicon NPN Power Transistor 2SC3752 DESCRIPTION High Breakdown Voltage and High Reliability High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Volt... See More ⇒
8.11. Size:88K inchange semiconductor
2sc3756.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3756 DESCRIPTION With TO-3PML package High speed High breakdown voltage High reliability APPLICATIONS For TV horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings (Ta=2... See More ⇒
8.12. Size:214K inchange semiconductor
2sc3755.pdf
isc Silicon NPN Power Transistor 2SC3755 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers and line operated switch-mode applications ABSOLUTE MAXIMUM RATINGS(T =2... See More ⇒
Detailed specifications: 2SC3752K, 2SC3752L, 2SC3752M, 2SC3753, 2SC3754, 2SC3755, 2SC3756, 2SC3757, TIP31C, 2SC3759, 2SC376, 2SC3760, 2SC3761, 2SC3762, 2SC3763, 2SC3764, 2SC3765
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