2SC3790E
Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC3790E
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 7
W
Maximum Collector-Base Voltage |Vcb|: 300
V
Maximum Collector-Emitter Voltage |Vce|: 300
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 150
MHz
Collector Capacitance (Cc): 2.6
pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: ISO126
2SC3790E
Transistor Equivalent Substitute - Cross-Reference Search
2SC3790E
Datasheet (PDF)
7.1. Size:175K sanyo
2sa1480 2sc3790.pdf
Ordering number:EN2254PNP/NPN Epitaxial Planar Silicon Transistors2SA1480/2SC3790High-Definiton CRT DisplayVideo Output ApplicationsFeatures Package Dimensions High breakdown voltage (VCEO 300V).unit:mm Small reverse transfer capacitance and excellent high2042Afrequency characteristic[2SA1480/2SC3790]: Cre=1.8pF (NPN), 2.3pF (PNP). Adoption of MBIT process.
7.2. Size:176K foshan
2sc3790 3da3790.pdf
2SC3790(3DA3790) NPN /SILICON NPN TRANSISTOR : Purpose: High-definition CRT display video output applications. : Features: High breakdown voltage, small reverse transfer capacitance and excellent high frequency characteristic. /Absolu
7.3. Size:187K inchange semiconductor
2sc3790.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3790DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOComplement to Type 2SA1480100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-definition CRT display and video outputapplications.ABSOLUTE MAXIMU
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