All Transistors. 2SC3790F Datasheet

 

2SC3790F Datasheet and Replacement


   Type Designator: 2SC3790F
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 7 W
   Maximum Collector-Base Voltage |Vcb|: 300 V
   Maximum Collector-Emitter Voltage |Vce|: 300 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 2.6 pF
   Forward Current Transfer Ratio (hFE), MIN: 160
   Noise Figure, dB: -
   Package: ISO126
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2SC3790F Datasheet (PDF)

 7.1. Size:175K  sanyo
 2sa1480 2sc3790.pdf pdf_icon

2SC3790F

Ordering number:EN2254PNP/NPN Epitaxial Planar Silicon Transistors2SA1480/2SC3790High-Definiton CRT DisplayVideo Output ApplicationsFeatures Package Dimensions High breakdown voltage (VCEO 300V).unit:mm Small reverse transfer capacitance and excellent high2042Afrequency characteristic[2SA1480/2SC3790]: Cre=1.8pF (NPN), 2.3pF (PNP). Adoption of MBIT process.

 7.2. Size:176K  foshan
 2sc3790 3da3790.pdf pdf_icon

2SC3790F

2SC3790(3DA3790) NPN /SILICON NPN TRANSISTOR : Purpose: High-definition CRT display video output applications. : Features: High breakdown voltage, small reverse transfer capacitance and excellent high frequency characteristic. /Absolu

 7.3. Size:187K  inchange semiconductor
 2sc3790.pdf pdf_icon

2SC3790F

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3790DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOComplement to Type 2SA1480100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-definition CRT display and video outputapplications.ABSOLUTE MAXIMU

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History: AUZ11 | 2SB1188SQ-R | AUY16 | 3DF5 | 2N717A | DTA144WET1G | BC300

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