2SC3806 Datasheet PDF and Equivalents Search

 8.1. Size:462K  toshiba

 2sc380tm.pdf

2SC380TM TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC380TM High Frequency Amplifier Applications Unit mm High power gain Gpe = 29dB (typ.) (f = 10.7 MHz) Recommended for FM IF, OSC stage and AM CONV. IF stage. Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 35 V Collector-emitter voltage ... See More ⇒

 8.2. Size:338K  toshiba

 2sc380.pdf

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 8.3. Size:184K  toshiba

 2sc3805.pdf

2SC3805 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3805 TV Horizontal Deflection Output Applications Unit mm TV Chroma Output Applications High voltage VCEO = 300 V Low output capacitance C = 3.0 pF (typ.) ob Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 300 V Collector-emitter voltage VCEO 300 V ... See More ⇒

 8.4. Size:194K  toshiba

 2sc3803.pdf

2SC3803 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3803 High Frequency Amplifier Applications Unit mm Video Amplifier Applications High Speed Switching Applications High transition frequency fT = 200 MHz (typ.) Low collector output capacitance C = 3.5 pF (typ.) ob Complementary to 2SA1483 Maximum Ratings (Ta = 25 C) Characteristics Sym... See More ⇒

 8.5. Size:87K  sanyo

 2sc3808.pdf

Ordering number EN2105A NPN Epitaxial Planar Silicon Transistor 2SC3808 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Low frequency general-purpose amplifiers, drivers. unit mm 2043A Features [2SC3808] Large current capacity (IC=2A). Adoption of MBIT process. High DC current gain (hFE=800 to 3200). Low collector-to... See More ⇒

 8.6. Size:128K  sanyo

 2sc3807.pdf

Ordering number EN2018A NPN Epitaxial Planar Silicon Transistor 2SC3807 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Low frequency general-purpose amplifiers, drivers. unit mm 2043A Features [2SC3807] Large current capacity (IC=2A). Adoption of MBIT process. High DC current gain (hFE=800 to 3200). Low collector-to... See More ⇒

 8.7. Size:34K  nec

 2sc3809.pdf

DATA SHEET SILICON TRANSISTOR 2SC3809 NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE FEATURES PACKAGE DIMENSIONS (in millimeters) The 2SC3809 is an NPN silicon epitaxial dual transistor having +0.3 5.0 MIN. 3.5-0.2 5.0 MIN. a large-gain-bandwidth product performance in a wide operating 3 2 current range. Dual chips i... See More ⇒

 8.8. Size:129K  rohm

 2sc3802k.pdf

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer ... See More ⇒

 8.9. Size:77K  secos

 2sc380tm.pdf

2SC380TM 0.05A , 35V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES High Frequency Amplifier Applications G H Emitter Collector J Base CLASSIFICATION OF hFE A D Millimeter REF. Min. Max. Product-Rank 2SC380TM-R 2SC380TM-O 2SC380TM-Y B A 4.40 4.70 ... See More ⇒

 8.10. Size:784K  blue-rocket-elect

 2sc380tm.pdf

2SC380TM Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features G =29dB( )(f=10.7MHz) pe High power Gain Gpe=29dB(Typ.)(f=10.7MHz).. / Applications High frequency amplifier applications. ... See More ⇒

 8.11. Size:1223K  kexin

 2sc3803.pdf

SMD Type Transistors NPN Transistors 2SC3803 1.70 0.1 Features High transition frequency fT = 200 MHz Low collector output capacitance Cob = 3.5 pF 0.42 0.1 0.46 0.1 Complementary to 2SA1483 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 45 ... See More ⇒

 8.12. Size:188K  foshan

 2sc3807 3da3807.pdf

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