2SC3809 Datasheet and Replacement

DATA SHEETSILICON TRANSISTOR2SC3809NPN SILICON EPITAXIAL TRANSISTORFOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGSINDUSTRIAL USEFEATURES PACKAGE DIMENSIONS (in millimeters) The 2SC3809 is an NPN silicon epitaxial dual transistor having+0.35.0 MIN. 3.5-0.2 5.0 MIN.a large-gain-bandwidth product performance in a wide operating3 2current range. Dual chips i

2SC380TM TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC380TM High Frequency Amplifier Applications Unit: mm High power gain: Gpe = 29dB (typ.) (f = 10.7 MHz) Recommended for FM IF, OSC stage and AM CONV. IF stage. Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 35 VCollector-emitter voltage

2SC3805 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3805 TV Horizontal Deflection Output Applications Unit: mm TV Chroma Output Applications High voltage: VCEO = 300 V Low output capacitance: C = 3.0 pF (typ.) obMaximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 300 VCollector-emitter voltage VCEO 300 V

2SC3803 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3803 High Frequency Amplifier Applications Unit: mm Video Amplifier Applications High Speed Switching Applications High transition frequency: fT = 200 MHz (typ.) Low collector output capacitance: C = 3.5 pF (typ.) ob Complementary to 2SA1483 Maximum Ratings (Ta = 25C) Characteristics Sym

Ordering number:EN2105ANPN Epitaxial Planar Silicon Transistor2SC3808High hFE, Low-FrequencyGeneral-Purpose Amplifier ApplicationsApplications Package Dimensions Low frequency general-purpose amplifiers, drivers. unit:mm2043AFeatures [2SC3808] Large current capacity (IC=2A). Adoption of MBIT process. High DC current gain (hFE=800 to 3200). Low collector-to

Ordering number:EN2018ANPN Epitaxial Planar Silicon Transistor2SC3807High hFE, Low-FrequencyGeneral-Purpose Amplifier ApplicationsApplications Package Dimensions Low frequency general-purpose amplifiers, drivers. unit:mm2043AFeatures [2SC3807] Large current capacity (IC=2A). Adoption of MBIT process. High DC current gain (hFE=800 to 3200). Low collector-to

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2SC380TM 0.05A , 35V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES High Frequency Amplifier Applications G HEmitterCollectorJBase CLASSIFICATION OF hFE A DMillimeter REF.Min. Max.Product-Rank 2SC380TM-R 2SC380TM-O 2SC380TM-YBA 4.40 4.70

2SC380TM Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features :G =29dB()(f=10.7MHz) pe High power Gain: Gpe=29dB(Typ.)(f=10.7MHz).. / Applications High frequency amplifier applications.

SMD Type TransistorsNPN Transistors2SC38031.70 0.1 Features High transition frequency: fT = 200 MHz Low collector output capacitance: Cob = 3.5 pF0.42 0.10.46 0.1 Complementary to 2SA14831.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 45

2SC3807(3DA3807) NPN /SILION NPN TRANSISTOR:Purpose: low frequency general-purpose amplifiers, drivers.: IC , hFE ,VCE(sat),VEBO Features: Large current capacity, high DC current gain,Low collector-to-emitter saturation voltageHigh V .EBO/Absolute maximum ratings(Ta=25)