2SC3813 Datasheet. Specs and Replacement
Type Designator: 2SC3813 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO218
2SC3813 Substitution
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2SC3813 datasheet
DATA SHEET SILICON TRANSISTOR 2SC3810 NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE FEATURES PACKAGE DIMENSIONS (in millimeters) The 2SC3810 is an NPN silicon epitaxial dual transistor having +0.3 5.0 MIN. 3.5-0.2 5.0 MIN. a large-gain-bandwidth product performance in a wide operating 3 2 current range. Dual chips i... See More ⇒
Transistor 2SC3811 Silicon NPN epitaxial planer type For high speed switching Unit mm 5.0 0.2 4.0 0.2 Features High-speed switching. Low collector to emitter saturation voltage VCE(sat). Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 Collector to base voltage VCBO 40 V 0.45 0.1 0.45 0.1 Collector to emitter voltage VCES 40 V 1.27 1.27 Emit... See More ⇒
Transistor 2SC3811 Silicon NPN epitaxial planer type For high speed switching Unit mm 5.0 0.2 4.0 0.2 Features High-speed switching. Low collector to emitter saturation voltage VCE(sat). Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 Collector to base voltage VCBO 40 V 0.45 0.1 0.45 0.1 Collector to emitter voltage VCES 40 V 1.27 1.27 Emit... See More ⇒
Detailed specifications: 2SC380TM, 2SC380TMO, 2SC380TMR, 2SC380TMY, 2SC381, 2SC3810, 2SC3811, 2SC3812, TIP31, 2SC3814, 2SC3815, 2SC3816, 2SC3817, 2SC3818, 2SC3819, 2SC382, 2SC3820
Keywords - 2SC3813 pdf specs
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History: 2SC3829 | 2SC3817
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