2SC3819
Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC3819
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 10
W
Maximum Collector-Base Voltage |Vcb|: 35
V
Maximum Collector Current |Ic max|: 4
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 1500
MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package:
TO129
2SC3819
Transistor Equivalent Substitute - Cross-Reference Search
2SC3819
Datasheet (PDF)
8.1. Size:34K nec
2sc3810.pdf
DATA SHEETSILICON TRANSISTOR2SC3810NPN SILICON EPITAXIAL TRANSISTORFOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGSINDUSTRIAL USEFEATURES PACKAGE DIMENSIONS (in millimeters) The 2SC3810 is an NPN silicon epitaxial dual transistor having+0.35.0 MIN. 3.5-0.2 5.0 MIN.a large-gain-bandwidth product performance in a wide operating3 2current range. Dual chips i
8.2. Size:41K panasonic
2sc3811.pdf
Transistor2SC3811Silicon NPN epitaxial planer typeFor high speed switchingUnit: mm5.0 0.2 4.0 0.2FeaturesHigh-speed switching.Low collector to emitter saturation voltage VCE(sat).Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.2Collector to base voltage VCBO 40 V0.45 0.1 0.45 0.1Collector to emitter voltage VCES 40 V1.27 1.27Emit
8.3. Size:45K panasonic
2sc3811 e.pdf
Transistor2SC3811Silicon NPN epitaxial planer typeFor high speed switchingUnit: mm5.0 0.2 4.0 0.2FeaturesHigh-speed switching.Low collector to emitter saturation voltage VCE(sat).Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.2Collector to base voltage VCBO 40 V0.45 0.1 0.45 0.1Collector to emitter voltage VCES 40 V1.27 1.27Emit
Datasheet: 2N3200
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