2SC382G Datasheet and Replacement
Type Designator: 2SC382G
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 300 MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO92
2SC382G Transistor Equivalent Substitute - Cross-Reference Search
2SC382G Datasheet (PDF)
2sc3820.pdf
Ordering number EN2544B NPN Epitaxial Planar Type Silicon Transistor 2SC3820 High hFE, AF Amplifier Applications Applications Package Dimensions Drivers, muting circuits. unit mm 2033 Features [2SC3820] Adoption of FBET and MBIT processes. High DC current gain (hFE=800 to 3200). Low collector-to-emitter saturation voltage (VCE(sat) 0.5V). High VEBO (VEBO 15... See More ⇒
2sc3829.pdf
Transistor 2SC3829 Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit mm +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features Low noise figure NF. High gain. 1 High transition frequency fT. 3 Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 2 packing. Absolute Maxi... See More ⇒
Datasheet: 2SC3822 , 2SC3823 , 2SC3824 , 2SC3825 , 2SC3826 , 2SC3827 , 2SC3828 , 2SC3829 , 2N4401 , 2SC382R , 2SC383 , 2SC3830 , 2SC3831 , 2SC3832 , 2SC3833 , 2SC3834 , 2SC3835 .
Keywords - 2SC382G transistor datasheet
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History: 2SC3900 | 2SC3801
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